Semiconductor processing system

• US 5,695,564 A
• Filed: 08/03/1995
• Issued: 12/09/1997
• Est. Priority Date: 08/19/1994
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Imahashi, Issei
• Primary Examiner(s): Bueker, Richard
• Assistant Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US08/510,668
• Time in Patent Office: 859 Days
• Field of Search: 118/719, 156/345, 204/298.25, 204/298.35, 414/217, 414/939
• US Class Current: 118/719
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67161 characterized by the layout of the process chambers
• CPC Class Codes: H01L 21/67184 characterized by the presence of more than one transfer chamber
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber

Abstract

A multi-chamber type process system for processing semiconductor wafers is constituted such that a plurality of units selected from process units, transfer units, interconnection units and in/out units are connected via gate valves. Each of the units has a casing with one or more openings through which each of the wafers passes. The gate valve is attached to a flange provided at the opening, thereby connecting the openings openably and air-tightly. The openings are situated such that the units are connected in a direction defined in units of substantially 90°, and the direction of transfer of the wafers is defined in units of substantially 90°. Those of the openings of the casings of the units, which are not connected to the other openings of the casings, are air-tightly closed by blind plates such that the casings of the units form a vacuum chamber. The internal pressure of each of the casings of the units can be independently controlled.

Claims

1. A semiconductor process system for processing a plurality of substrates, comprising:

first and second process units each having a process casing with at least one opening through which each of the substrates can pass, support means for supporting each of the substrates within the process casing, and means for subjecting each of the substrates to a semiconductor process within the process casing;

first and second transfer units each having a transfer casing with at least four openings through which each of the substrates can pass, and a transfer arm, provided within the transfer casing, for transferring each of the substrates, said first and second transfer units being connected to said first and second process units via joints, respectively, said joints connecting the adjoining openings of the two associated units openably and air-tightly;

an interconnection unit having an interconnection casing with at least two openings through which each of the substrates can pass, and a table, provided within the interconnection casing, for supporting each of the substrates, said interconnection unit being connected to said first and second transfer units via joints, said joints connecting the adjoining openings of the two associated units openably and air-tightly; and

an in/out unit having an in/out casing with at least one opening through which each of the substrates can pass, and vertical movement means for vertically moving at least one cassette storing said substrates at intervals within the in/out casing, said in/out unit being connected to said first transfer unit via a joint, said joint connecting the adjoining openings of the two associated units openably and air-tightly,

wherein the opening of each of said units is situated such that said units are connected in directions defined in units of substantially 90°

, and the direction of transfer of the substrates is defined in units of substantially 90°

,

openings of the casings of said process units, said transfer units and said interconnection unit, which are not connected to any of the other openings of the casings, are air-tightly closed by blind plates such that each of the casings of said process units, said transfer units and said inter-connection unit form a vacuum chamber,

said joints comprise gate valves having common mounting dimensions,

said first and second process units have an installation floor space of substantially a same square,

said first and second transfer units have a substantially same size and structure, and have an installation floor space smaller than that of said first and second process units,

each of said process units and each of said transfer units connected thereto face each other to have a width of an installation floor space substantially a same as each other and have aligned centers,

said interconnection unit has an installation floor space smaller than that of said first and second transfer units,

said interconnection unit and each of said transfer units face each other to have a width of an installation floor space substantially a same as each other and to have aligned centers, and

said first process unit and said first transfer unit constitute a first process section having only one process unit and only one transfer unit, while said second process unit and said second transfer unit constitute a second process section having only one process unit and only one transfer unit.

2. The system according to claim 1, wherein an inert gas supply system and an exhaust system are connected to each of the casings of said process units, said transfer units and said interconnection unit and the internal pressure of each of the casings can be independently controlled.

3. The system according to claim 2, wherein the casing of said in/out unit constitutes a vacuum chamber, an inert gas supply system and an exhaust system are connected to the casing of said in/out unit, and the internal pressure of the casing of the in/out unit can be independently controlled.

4. The system according to claim 3, wherein said cassette is fed to said in/out unit in a state in which said cassette is stored in a container filled with an inert gas, said container having a container body with an open end portion, and a bottom plate for closing the open end of the container body and supporting said cassette, and

said in/out unit further comprises means for creating a closed space in cooperation with said container body, and while said closed space is created, said bottom plate is moved from said container body by means of said vertical movement means and said cassette is taken into the casing of the cassette from the container.

5. The system according to claim 1, wherein said interconnection unit has two said openings situated in two directions defined at 180°

or in two directions defined at 90°

.

6. The system according to claim 1, wherein said interconnection unit includes means for subjecting said substrates to at least one specific treatment selected from the group consisting of tests, alignment, temperature control and film formation.

7. The system according to claim 1, wherein the casing of said in/out unit has two said openings and said vertical movement means is capable of vertically moving two said cassettes.

8. The system according to claim 1, wherein an in/out unit, which is substantially identical to said in/out unit, is connected to said second transfer unit via a joint.

9. The system according to claim 1, wherein each of said units is basically designed to have an installation floor space corresponding to an N number (N=a positive integer of four or less) of times of a reference square.

10. A semiconductor process system for processing a plurality of substrates, comprising:

(a) a plurality of process kits each designed to have substantially a same installation floor space,

said process kits each having only one process unit and only one transfer unit connected to each other,

the process units of said process kits being designed to have an installation floor space of substantially a same square,

the transfer units of said process kits being designed to have a substantially same size and structure, and to have an installation floor space smaller than that of each of said process units,

each of said process units and each of said transfer units connected thereto facing each other to have a substantially same width of an installation floor space as each other and to have aligned centers,

said process units each having a process casing with at least one opening through which each of the substrates can pass, support means for supporting each of the substrates within the process casing, and means for subjecting each of the substrates to a semiconductor process within the process casing,

said transfer units each having a transfer casing with at least four openings through which each of the substrates can pass, and a transfer arm, provided within the transfer casing, for transferring each of said substrates, said transfer units being respectively connected to said process units via a gate valve, which connects the adjoining openings of the two associated units openably and air-tightly;

(b) an interconnection unit connecting a pair of said transfer units which belong to two adjacent process kits,

said interconnection unit being designed to have an installation floor space smaller than that of each of said transfer units,

said interconnection unit and each of said transfer units facing each other to have a substantially same width of an installation floor space as each other and to have aligned centers,

said interconnection unit having an interconnection casing with at least two openings through which each of the substrates can pass, and a table, provided within the interconnection casing, for supporting each of the substrates, said interconnection unit being connected to said transfer units via a gate valve which connects adjoining openings of the two associated units openably and air-tightly; and

(c) an in/out section connected to at least one selected transfer unit, which belongs to one of said process kits to transfer the substrates into and from said selected transfer unit,

said in/out section having at least one opening through which each of the substrates can pass, and being connected to said selected transfer unit via a gate valve, which connects adjoining openings of two associated units openably and air-tightly,

wherein the openings of each of said units is situated such that said units are connected in directions defined in units of substantially 90°

, and a direction of transfer of the substrates is defined in units of substantially 90°

,

the openings of the casings of said process units, said transfer units and said interconnection unit, which are not connected to any of the other openings of the casings, are air-tightly closed by blind plates such that each of the casings of said process units, said transfer units and said interconnection unit form a vacuum chamber, and

said gate valves have common mounting dimensions.

11. The system according to claim 10, wherein an inert gas supply system and an exhaust system are connected to each of the casings of said process units, said transfer units and said interconnection unit and the internal pressure of each of the casings can be independently controlled.

12. The system according to claim 10, wherein said interconnection unit has two said openings situated in two directions defined at 180°

or in two directions defined at 90°

.

13. The system according to claim 10, wherein said interconnection unit includes means for subjecting said substrates to at least one specific treatment selected from the group consisting of tests, alignment, temperature control and film formation.

14. The system according to claim 10, wherein each of said units is basically designed to have an installation floor space corresponding to an N number (N=a positive integer of four or less) of times of a reference square.