Use of cobalt tungsten phosphide as a barrier material for copper metallization

• US 5,695,810 A
• Filed: 11/20/1996
• Issued: 12/09/1997
• Est. Priority Date: 11/20/1996
• Status: Expired due to Term

• Current Assignee: Cornell Research Foundation Incorporated (Cornell University), Intel Corporation, Sematech, Inc.
• Original Assignee: Cornell Research Foundation Incorporated (Cornell University), Intel Corporation, Sematech, Inc.
• Inventors: Schacham-Diamand, Yosi, Zhao, Bin, Dubin, Valery M., Ting, Chiu H., Vasudev, Prahalad K.
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): CHEN, BRET P
• Application Number:
  US08/754,600
• Time in Patent Office: 384 Days
• Field of Search: 427/96, 427/98, 427/437, 427/443.1, 437/192, 437/195, 437/230
• US Class Current: 438/643
• CPC Class Codes: C23C 18/1603 coating on selected surface areas
• CPC Class Codes: C23C 18/1651 Two or more layers only obtained by electroless plating
• CPC Class Codes: C23C 18/1689 After-treatment
• CPC Class Codes: C23C 18/405 Formaldehyde
• CPC Class Codes: C23C 18/50 with alloys based on iron, cobalt or nickel
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2221/1089 Stacks of seed layers

Abstract

A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.

Claims

1. A method of electrolessly depositing copper onto a barrier layer which separates said copper from another layer disposed on an opposite side of said barrier layer from said copper, comprising the steps of:

depositing cobalt-tungsten-phosphide, CoWP, electrolessly on an exposed surface of said another layer to form said barrier layer;

depositing said copper electrolessly.

2. The method of claim 1 wherein said copper forms an interconnect structure on a semiconductor wafer.

3. The method of claim 2 wherein said copper is selectively deposited by electroless deposition.

4. The method of claim 1 wherein said CoWP layer is deposited by subjecting said exposed surface of said another layer to an electroless deposition solution comprised of cobalt and tungsten with hypophosphite as a reducing agent.

5. The method of claim 4 wherein said tungsten in said electroless deposition solution is in the range of 2-7 percent by atomic weight percentage.

6. A method of electrolessly depositing a barrier layer on copper, comprising the steps of:

depositing said copper to form a copper layer;

depositing cobalt-tungsten-phosphide, CoWP, electrolessly on an exposed surface of said copper layer to form said barrier layer.

7. The method of claim 6 wherein said copper layer forms an interconnect structure on a semiconductor wafer.

8. The method of claim 7 wherein said copper is selectively deposited by electroless deposition.

9. The method of claim 6 wherein said CoWP barrier layer is deposited by subjecting said exposed surface of said copper layer to an electroless deposition solution comprised of cobalt and tungsten with hypophosphite as a reducing agent.

10. The method of claim 9 wherein said tungsten in said electroless deposition solution is in the range of 2-7 percent by atomic weight percentage.

11. A method of electrolessly depositing a diffusion barrier layer on a material layer, comprising the steps of:

activating a surface of said material layer for autocatalytic growth of cobalt-tungsten-phosphide, (CoWP), by forming an activation seed layer for CoWP on said surface of said material layer;

depositing CoWP electrolessly on said surface of said material layer to form said diffusion barrier layer.

12. The method of claim 11 wherein said material layer is formed from a dielectric material.

13. The method of claim 12 wherein said seed layer is formed by depositing cobalt, tungsten, palladium or platinum on said dielectric material.

14. The method of claim 13 further including the step of electrolessly depositing copper onto said CoWP diffusion barrier layer.

15. The method of claim 11 wherein said CoWP diffusion barrier layer is deposited by subjecting said surface of said material layer to an electroless deposition solution comprised of cobalt and tungsten with hypophosphite as a reducing agent.

16. The method of claim 15 wherein said tungsten in said electroless deposition solution is in the range of 2-7 percent by atomic weight percentage.

17. A method of electrolessly depositing a diffusion barrier layer on a conductive layer formed on a semiconductor wafer in order to prevent diffusion of atoms between said conductive layer and a subsequent layer deposited onto said diffusion barrier layer, comprising the steps of:

depositing cobalt-tungsten-phosphide, CoWP, electrolessly on said conductive layer to form said diffusion barrier layer;

depositing said subsequent layer over said diffusion barrier layer.

18. The method of claim 17 wherein said conductive layer is catalytic to electroless deposition of CoWP.

19. The method of claim 18 wherein said conductive layer is comprised of copper or a copper alloy.

20. The method of claim 19 wherein said CoWP diffusion barrier layer is deposited by subjecting said surface of said conductive layer to an electroless deposition solution comprised of cobalt and tungsten with hypophosphite as a reducing agent.

21. The method of claim 20 wherein said tungsten in said electroless deposition solution is in the range of 2-7 percent by atomic weight percentage.