Method of forming guard ringed schottky diode
First Claim
Patent Images
1. A method of forming a guard ring for a Schottky diode having a well and an active area, comprising the steps of:
- forming anode and cathode contact openings;
depositing a layer of doped material;
etching the layer of doped material to create spacers in the anode and cathode openings; and
controlling the outdiffusion of dopant from the spacers so as to form a guard ring in the well without affecting the active area.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of forming a guard ring for a Schottky diode is comprised of the steps of forming anode and cathode contact openings. A layer of doped material is deposited and etched to create spacers in the anode and cathode openings. The outdiffusion of dopant from the spacers is controlled to form a guard ring in the well without affecting the active area. The method can be used to create a p-type guard ring in an n-well or an n-type guard ring in a p-well. A Schottky diode constructed according to the method is also disclosed.
-
Citations
17 Claims
-
1. A method of forming a guard ring for a Schottky diode having a well and an active area, comprising the steps of:
-
forming anode and cathode contact openings; depositing a layer of doped material; etching the layer of doped material to create spacers in the anode and cathode openings; and controlling the outdiffusion of dopant from the spacers so as to form a guard ring in the well without affecting the active area. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of forming a Schottky diode having a guard ring, comprising the steps of:
-
forming an anode contact opening extending to one of an active area and a well and a cathode contact opening extending to the other of the active area and the well; depositing a layer of doped material; etching the layer of doped material to create spacers in the anode and cathode openings; controlling the outdiffusion of dopant from the spacers so as to form a guard ring in the well without affecting the active area; depositing a Schottky barrier material at the bottom of the anode and cathode contact openings; and substantially filling the anode and cathode contact openings with a conductive material. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification