Varying potential silicon carbide gas sensor

• US 5,698,771 A
• Filed: 03/30/1995
• Issued: 12/16/1997
• Est. Priority Date: 03/30/1995
• Status: Expired due to Fees

• Current Assignee: The United States Of America As Represented By The National Aeronautics And Space Administration, United States Incorporated
• Original Assignee: United States Administrator of National Aeronautics and Space Administration
• Inventors: Shields, Virgil B., Williams, Roger M., Ryan, Margaret A.
• Primary Examiner(s): Brock, Michael
• Assistant Examiner(s): WIGGINS, JOHN DAVID
• Application Number:
  US08/413,297
• Time in Patent Office: 992 Days
• Field of Search: 73/31.05, 73/23.2, 73/31.06, 73/23.31, 73/23.32, 422/88, 422/94, 324/609, 324/663, 324/691, 324/693, 338/34
• US Class Current: 73/31.05
• CPC Class Codes: G01N 27/4141 specially adapted for gases

Abstract

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100° C. and at least 650° C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

Claims

1. An electronic device of semiconductor design for detecting hydrocarbon gases comprising:

a detection layer having first and second surfaces, and forming a gate of a metal insulator field effect transistor, the detection layer comprising;

a wafer of silicon carbide;

a layer of porous silicon carbide formed at a first surface of said silicon carbide wafer by photoelectrochemical etching, the layer of porous silicon carbide for adsorbing hydrocarbon gases;

a metal grid deposited onto the porous silicon carbide layer; and

an electrode in electrical communication with the metal grid for applying a varying dissociating potential to said porous silicon carbide layer for dissociating hydrocarbon molecules adsorbed to said porous silicon carbide layer;

an insulation layer formed on a second surface of the detection layer;

a channel layer of doped silicon carbide formed on an exposed surface of the insulation layer; and

drain and source electrodes disposed on the channel layer at opposite sides thereof so that dissociation of hydrocarbons in the detection layer causes an alteration in a current flow between the drain electrode and the source electrode, a magnitude of said alteration indicating a quantity of hydrocarbon gas adsorbed to the detection layer and a magnitude of the dissociating potential indicating a type of hydrocarbon gas adsorbed to the detection layer.

2. The electronic device of claim 1, wherein the wafer of silicon carbide forming the detection layer is hexagonal form silicon carbide fabricated with its C-axis normal to the first surface of said silicon carbide wafer.

3. The electronic device of claim 1, wherein the dissociating potential varies between 0 V and about 10 V.

4. The electronic device of claim 1, wherein the insulation layer comprises a layer of single crystal aluminum nitride.

5. The electronic device of claim 1, wherein the detection layer further comprises a layer of catalytic material deposited over an portion of the first surface of the porous silicon carbide layer.

6. The electronic device of claim 5, wherein the catalytic material is selected from the group consisting of platinum, vanadium, molybdenum carbide, tungsten carbide, titanium carbide, niobium carbide and palladium.

7. The electronic device of claim 5, wherein a region of the porous silicon layer is removed beneath the catalytic material so that the layer of catalytic material contacts the silicon carbide wafer.

8. An electronic device of semiconductor design for detecting hydrocarbon gases comprising:

a detection layer having first and second surfaces, comprising;

a region of porous silicon carbide formed at a first surface of said silicon carbide wafer by photoelectrochemical etching, the region of porous silicon carbide for adsorbing hydrocarbon gases;

a metal grid deposited on the porous silicon carbide region; and

a first electrode in electrical communication with the metal grid for applying

a varying dissociating potential to said porous silicon carbide region for dissociating hydrocarbon molecules adsorbed to said porous silicon carbide region; and

a second electrode deposited on a second surface of the silicon carbide wafer, the second electrode for applying a potential to said porous silicon carbide region in concert with the first electrode and for measuring changes of a current flow between the electrodes, a magnitude of the current flow indicating a quantity of hydrocarbon adsorbed to said porous silicon region and a magnitude of the dissociating potential indicating a type of hydrocarbon adsorbed to said porous silicon region.

9. The electronic device of claim 8, wherein the dissociating potential varies between 0 V and about 10 V.

10. The electronic device of claim 8, wherein the silicon carbide wafer forming the detection layer is hexagonal form silicon carbide with the C-axis normal to the first surface.

11. The electronic device of claim 8, wherein the detection layer further comprises a layer of catalytic material deposited over a portion of the porous silicon carbide region.

12. The electronic device of claim 11, wherein the catalytic-material is selected from the group consisting of platinum, vanadium, molybdenum carbide, tungsten carbide, titanium carbide, niobium carbide and palladium.

13. The electronic device of claim 11, wherein an area of the porous silicon layer is removed beneath the layer of catalytic material so that the layer of catalytic material contacts the silicon carbide wafer.

14. An electronic device of semiconductor design for detecting hydrocarbon gases comprising:

a wafer of silicon carbide;

a channel layer of doped silicon carbide formed on an exposed surface of the wafer with metallic drain and source electrodes disposed on the channel layer at opposite sides thereof; and

an insulation layer formed on an exposed surface of the channel layer;

a detection layer having a first and second surface, and forming a gate of a field effect transistor, the detection layer comprising;

a layer of polycrystalline silicon carbide formed on an exposed surface of said insulation layer for adsorbing hydrocarbon gases;

a metal grid deposited on the polycrystalline silicon carbide layer; and

an electrode in electrical communication with the metal grid for applying a varying dissociating potential to said polycrystalline silicon carbide layer for dissociating hydrocarbon gas molecules adsorbed to the polycrystalline silicon carbide layer so that dissociation of hydrocarbon gas molecules causes an alteration in a current flow between the drain electrode and the source electrode, a magnitude of said alteration indicating a quantity of hydrocarbon gas adsorbed to the detection layer and a magnitude of the dissociating potential indicating a type of hydrocarbon gas absorbed to the detection layer.

15. The electronic device of claim 14, wherein the dissociating potential varies between 0 V and about 10 V.

16. The electronic device of claim 14, wherein the silicon carbide wafer is hexagonal form silicon carbide.

17. The electronic device of claim 14, wherein the silicon carbide wafer is cubic form silicon carbide.

18. The electronic device of claim 14, wherein the insulation layer comprises a layer of single crystal aluminum nitride.

19. The electronic device of claim 14, wherein the detection layer further comprises a layer of catalytic material deposited over a portion of the poly-crystalline silicon carbide layer.

20. An electronic device of semiconductor design for detecting hydrocarbon gases comprising:

a detection layer with a first surface and a second surface, comprising;

a wafer of silicon carbide;

a layer of polycrystalline silicon carbide formed on a first surface of said wafer for adsorbing hydrocarbon gases;

a metal grid deposited on the polycrystalline silicon carbide layer; and

an electrode in electrical communication with the metal grid for applying a varying dissociating potential to said polycrystalline silicon carbide region, said dissociating potential for dissociating hydrocarbon gases adsorbed to the detection layer;

an insulation layer formed on a second surface of the silicon carbide wafer; and

a second electrode deposited on the insulation layer, the second electrode for applying a potential to said polycrystalline silicon carbide layer in concert with the first electrode and for measuring changes of current flow between the electrodes, a magnitude of the current flow indicating a quantity of hydrocarbon adsorbed to said polycrystalline silicon carbide layer and a magnitude of the dissociating potential indicating a type of hydrocarbon adsorbed to said polycrystalline silicon carbide layer.

21. The electronic device of claim 20, wherein the dissociating potential varies between 0 V and about 10 V.

22. The electronic device of claim 20, wherein the detection layer further comprises a layer of catalytic material deposited over an area of the poly-crystalline silicon carbide layer.

23. A method of employing a semiconductor device to detect hydrocarbon gases comprising the steps of:

providing a semiconductor device with a detection layer of silicon carbide to interact with a gas sample;

operating said semiconductor device at temperatures between about 100°

C. and 650°

C.;

introducing a gas sample to be tested by exposure to a surface of the detection layer so that the gas sample adsorbs to the detection layer;

varying a dissociating potential applied to the detection layer;

measuring a change in an electrical characteristic of the semiconductor device as indicative of a quantity of hydrocarbon gas adsorbed to the detection layer; and

measuring the potential at which the change in an electrical characteristic occurs as indicative of a type of hydrocarbon gas present in the detection layer.

24. The method of claim 23, wherein the detection layer further comprises a pad of catalytic material covering a portion of the silicon carbide of the detection layer.

25. The method of claim 24, wherein the catalytic material is selected from the group consisting of platinum, vanadium, molybdenum carbide, tungsten carbide, titanium carbide, niobium carbide and palladium.

26. The method of claim 23, wherein the dissociating potential is varied between about 0 V and 10 V.

27. The method of claim 23 further comprising a step of reversing polarity of the dissociating potential to regenerate the semiconductor device.