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Light-emitting diode

  • US 5,698,865 A
  • Filed: 04/12/1996
  • Issued: 12/16/1997
  • Est. Priority Date: 05/13/1995
  • Status: Expired due to Fees
First Claim
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1. Light-emitting diode comprising a substrate, a light-emission-generating layer embedded between respective cladding layers of a double heterostructure and located on the substrate, a current diffusion layer located on the top cladding layer, on which current diffusion layer there is a contact layer structure, wherein the current diffusion layer has a thickness in the range of from approximately 50-500 nm and absorbs hardly any light-emission, and wherein the contact layer structure has branched and finger-type electrodes which extend outwardly from a control area for bonding and which ohmically contact the current diffusion layer to distribute the current across the surface of the light-emission-generating layer, said branched and finger-type electrodes having a width in the range of approximately 4-12 μ

  • m and with the degree of coverage of the current diffusion layer by the branched and finger-type electrodes being in the range of approximately 5-25%.

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