Semiconductor apparatus with a multiple element electrode structure

• US 5,698,898 A
• Filed: 05/21/1996
• Issued: 12/16/1997
• Est. Priority Date: 12/21/1995
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Matsumoto, Hideo
• Primary Examiner(s): Whitehead, Jr., Carl W.
• Application Number:
  US08/650,995
• Time in Patent Office: 574 Days
• Field of Search: 257/712, 257/713, 257/714, 257/718, 257/666, 257/692, 257/698, 257/787, 257/788, 257/789, 257/790, 257/791, 257/784, 257/728, 333/247
• US Class Current: 257/712
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2924/207 Diameter ranges

Abstract

A bolt (42a) is connected to a copper plate (9a) by a first electrode (51a), a second electrode (52a) and a wire (10a) for connecting the first and second electrodes. Similarly, a bolt (42b) is connected to a copper plate (9b) by a first electrode (51b), a second electrode (52b) and a wire (10b) for connecting the first and second electrodes. The wires (10a, 10b) are flexible and made of aluminum, for example. Electrical connection can be kept and the upper bound of absorption of the stress applied between the bolts (42a, 42b) and the copper plates (9a, 9b) can be increased.

Claims

1. A semiconductor apparatus comprising:

a heat radiating plate;

a semiconductor device whose heat is radiated from said heat radiating plate;

an insulating substrate that includes a first face having a circuit pattern on which said semiconductor device is placed, and a second face with which said heat radiating plate comes in contact;

an insulating case which includes a bottom and a side and encloses said semiconductor device together with said first face of said insulating substrate; and

at least one electrode leading portion which is connected to said semiconductor device through said circuit pattern and penetrates said case,

wherein each of said at least one electrode leading portion includes;

a first electrode which is electrically connected and fixed to said circuit pattern;

a second electrode fixed to said case; and

a conductor parallel to said heat radiating plate which is flexible and electrically connects said first electrode to said second electrode.

2. The semiconductor apparatus according to claim 1, wherein said second electrode is provided on said bottom of said case,

said first and second electrodes have horizontal portions in the vicinity of said conductor, said horizontal portions being almost on a level with each other from said insulating substrate, and

an opening is provided on a part of said bottom of said case.

3. The semiconductor apparatus according to claim 2, wherein said horizontal portions of said first and second electrodes are backed with a reinforcing member on the opposite side to said, opening.

4. The semiconductor apparatus according to claim 1, wherein said at least one electrode leading portion is a plurality of electrode leading portions, and

said case further comprises an insulating projection which extends from said bottom to said heat radiating plate between said plurality of electrode leading portions which are provided adjacently to each other.

5. The semiconductor apparatus according to claim 1, wherein said at least one electrode leading portion is a plurality of electrode leading portions,

said first electrodes which are provided adjacently to each other are bent back to back with each other, and

a space between said second electrodes corresponding to said first electrodes respectively is greater than a space between said first electrodes.

6. A semiconductor apparatus comprising:

a heat radiating plate;

a semiconductor device whose heat is radiated from said heat radiating plate;

an insulating substrate that includes a first face having a circuit pattern on which said semiconductor device is placed, and a second face with which said heat radiating plate comes in contact;

an insulating case which includes a bottom and a side and encloses said semiconductor device together with said first face of said insulating substrate; and

at least one electrode leading portion which is connected to said semiconductor device through said circuit pattern and penetrates said case,

wherein each of said at least one electrode leading portion includes;

first electrode which is electrically connected and fixed to said circuit pattern;

a second electrode provided on said bottom of said case; and

a conductor which is flexible and electrically connects said first electrode to said second electrode;

wherein said first and second electrodes have horizontal portions in the vicinity of said conductor, said horizontal portions being almost on a level with each other from said insulating substrate,

wherein an opening is provided on a part of said bottom of said case, and

wherein said horizontal portions of said first and second electrodes are backed with a reinforcing member on the opposite side to said opening.

7. The semiconductor apparatus according to claim 6, wherein said at least one electrode leading portion is a plurality of electrode leading portions, and

said case further comprises an insulating projection which extends from said bottom to said heat radiating plate between said plurality of electrode leading portions which are provided adjacently to each other.

8. The semiconductor apparatus according to claim 6, wherein said at least one electrode leading portion is a plurality of electrode leading portions,

said first electrodes which are provided adjacently to each other are bent back to back with each other, and

a space between said second electrodes corresponding to said first electrodes respectively is greater than a space between said first electrodes.

9. A semiconductor apparatus comprising:

a heat radiating plate;

a semiconductor device whose heat is radiated from said heat radiating plate;

an insulating substrate that includes a first face having a circuit pattern on which said semiconductor device is placed, and a second face with which said heat radiating plate comes in contact;

an insulating case which includes a bottom and a side and encloses said semiconductor device together with said first face of said insulating substrate; and

a plurality of electrode leading portions which are connected to said semiconductor device through said circuit pattern and penetrates said case,

wherein each of said plurality of electrode leading portions includes;

a first electrode which is electrically connected and fixed to said circuit pattern;

a second electrode fixed to said case; and

a conductor which is flexible and electrically connects said first electrode to said second electrode; and

wherein said first electrodes which are provided adjacently to each other are bent back to back with each other, and

a space between said second electrodes corresponding to said first electrodes respectively is greater than a space between said first electrodes.

10. The semiconductor apparatus according to claim 9, wherein said second electrode is provided on said bottom of said case,

said first and second electrodes have horizontal portions in the vicinity of said conductor, said horizontal portions being almost on a level with each other from said insulating substrate, and

an opening is provided on a part of said bottom of said case.

11. The semiconductor apparatus according to claim 10, wherein said horizontal portions of said first and second electrodes are backed with a reinforcing member on the opposite side to said opening.

12. The semiconductor apparatus according to claim 9, wherein said case further comprises an insulating projection which extends from said bottom to said heat radiating plate between said plurality of electrode leading portions which are provided adjacently to each other.