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Block for polishing a wafer during manufacture of integrated circuits

  • US 5,702,290 A
  • Filed: 04/08/1996
  • Issued: 12/30/1997
  • Est. Priority Date: 08/08/1994
  • Status: Expired due to Fees
First Claim
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1. A block for removing a portion of a wafer using relative motion between said block and said wafer, said wafer having a plurality of photolithographic images, each of said photolithographic images comprising a plurality of protrusions, and said block has an eroding surface for eroding said portion of said wafer, wherein:

  • said eroding surface has a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi at each point of said eroding surface, andsaid eroding surface has an area between a maximum area and a minimum area, said minimum area being larger than an area of said photolithographic image and said maximum area being the largest possible area for said eroding surface to remain in contact with all protrusions of said wafer covered by said eroding surface prior to said relative motion.

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