Method for fabricating a high pressure piezoresistive transducer

• US 5,702,619 A
• Filed: 09/30/1996
• Issued: 12/30/1997
• Est. Priority Date: 02/05/1996
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Ned, Alexander A., Bemis, Andrew V., Nunn, Timothy A.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/723,519
• Time in Patent Office: 456 Days
• Field of Search: 156/631.1, 156/633.1, 156/647.1, 156/657.1, 156/662.1, 216/2, 216/33, 148/DIG. 159, 437/228 SEN, 437/921, 437/901, 73/727
• US Class Current: 216/2
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm

Abstract

A method of fabricating a high pressure piezoresistive pressure transducer having a substantially linear pressure versus stress output over its full range of operation. The method involves bonding a carrier wafer having a dielectric isolating layer on one surface and a supporting member on the opposite surface, to a pattern wafer containing at least two single crystalline longitudinal piezoresistive sensing elements of a second conductivity. Both the pattern wafer and sections of the carrier wafer are etched leaving the piezoresistive sensing elements bonded directly to the dielectric isolating layer, and a diaphragm member having a deflecting portion and a non-deflecting portion. The diaphragm member is constructed to have an aspect ratio which is of the order of magnitude of one. The piezoresistive sensing elements have a large transverse piezoresistive coefficient normal to the plane of the diaphragm and both a large longitudinal piezoresistive coefficient and a small transverse piezoresistive coefficient in the plane of the diaphragm. One of the at least two piezoresistive sensing elements is positioned above the non-deflection portion of the diaphragm in an area of minimal longitudinal stress and the other is positioned above the deflecting portion of the diaphragm in an area of high compressive stress. The positioning of the second sensor over the deflecting portion of the diaphragm is selected so that there will be equal and opposite resistance changes registered from the sensors. The method results in an improved transducer design when compared to prior art devices.

Claims

1. A method for fabricating a high pressure piezoresistive transducer comprising the steps of:

bonding a pattern wafer containing at least two sensing elements of a semiconductor material to a carrier wafer of a semiconducting material and having a dielectric isolating layer on one surface;

etching said pattern wafer to leave said piezoresistive sensing elements disposed on said dielectric layer;

forming a diaphragm member in said carrier wafer said diaphragm member having a deflecting portion and a non-deflecting portion, said deflecting portion being positioned under at least one of said at least two piezoresistive sensing elements and said non-deflecting portion being positioned under said other one of said at least two piezoresistive sensing elements;

bonding an insulating supporting member to said carrier wafer on the surface opposite to said piezoresistive sensing elements; and

forming an electrically coupled bridge arrangement such that said piezoresistive sensing element positioned over said non-deflecting portion of said diaphragm member exhibits a positive change in resistance and is connected in series with said other one of said at least two piezoresistive sensing elements which is positioned above said deflecting portion of said diaphragm member and exhibits a negative change in resistance.

2. The method according to claim 1, wherein the aspect ratio of said diaphragm member is made to be of the order magnitude of one.

3. The method according to claim 1, wherein said bonding of said carrier wafer to said pattern wafer comprises fusion bonding.

4. The method according to claim 1, further comprising the step of etching said carrier wafer such that the vertical depth of said diaphragm member is substantially the same order of magnitude as the lateral dimension of said diaphragm member.

5. The method according to claim 1, wherein said dielectric isolating layer is formed by a process which includes the steps of:

heating said carrier wafer to a temperature of between 1000°

-1300°

C. and

passing a stream of oxygen over the surface of said carrier wafer.

6. The method according to claim 1, wherein said step of bonding said insulating supporting member to said carrier wafer comprises an anodic bonding process.