Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
First Claim
1. A multichip semiconductor device structure comprising:
- a first chip having a first planar main surface;
a second semiconductor device chip having a second planar main surface, said first chip and said second semiconductor device chip being stacked together such that said first planar surface of said first chip is parallel to said second planar main surface of said second semiconductor device chip; and
interchip electrical discharge suppression means electrically coupling said first chip and said second semiconductor device chip for suppressing an electrical discharge occurring therebetween.
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Accused Products
Abstract
Interchip and intrachip electrical discharge suppression connections or networks are disclosed for three-dimensional multichip semiconductor structures. The interchip suppression networks electrically intercouple the power planes of the semiconductor device chips in the structure. This, in combination with conventional intrachip suppression networks present on the external connects or input/output pins of the individual chips in the structure, provides complete power plane-to-power plane, external connect-to-power plane and external connect-to-external connect protection against electrical discharge events, such as an electrostatic discharge occurring during handling and testing of the structure. The interchip electrical discharge suppression networks can be placed on an end layer or end semiconductor chip of the three-dimensional multichip semiconductor structure and connect to individual chips in the structure via an edge surface metallization. Techniques for suppressing electrical discharges occurring during the fabrication of three-dimensional multichip semiconductor structure are also disclosed.
119 Citations
19 Claims
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1. A multichip semiconductor device structure comprising:
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a first chip having a first planar main surface; a second semiconductor device chip having a second planar main surface, said first chip and said second semiconductor device chip being stacked together such that said first planar surface of said first chip is parallel to said second planar main surface of said second semiconductor device chip; and interchip electrical discharge suppression means electrically coupling said first chip and said second semiconductor device chip for suppressing an electrical discharge occurring therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A multichip semiconductor stack comprising:
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a first semiconductor device chip having a first substrate, a first Vcc supply, a first Vss supply, and a first input/output connect, said first semiconductor device chip further including a first intrachip electrostatic discharge protection circuit electrically coupled between said first input/output connect and said first Vcc supply, and between said first input/output connect and said first Vss supply; a second semiconductor device chip having a second substrate, a second Vcc supply, a second Vss supply, and a second input/output connect, said second semiconductor device chip further including a second intrachip electrostatic discharge protection circuit electrically coupled between said second input/output connect and said second Vcc supply, and between said second input/output connect and said second Vss supply; and an interchip electrostatic discharge protection network interconnecting said first semiconductor device chip and said second semiconductor device chip such that said first Vcc supply is electrically coupled to said second Vcc supply, said first Vss supply is electrically coupled to said second Vss supply, said first Vcc supply is electrically coupled to said second Vss supply, and said first Vss supply is electrically coupled to said second Vcc supply. - View Dependent Claims (16, 17, 18)
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19. A method for fabricating a semiconductor structure comprising:
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(a) forming a multichip stack by stacking together a first semiconductor device chip having a first planar main surface and a second semiconductor device chip having a second planar main surface such that said first planar main surface is parallel to said second planar main surface; (b) metallizing a first edge surface of said multichip stack such that a substrate of said first semiconductor device chip is electrically connected to a substrate of said second semiconductor device chip; and (c) subsequent to said step (b), forming a metallization pattern on a second edge surface of said semiconductor structure, said metallization pattern including at least one external connect of said first semiconductor device chip and at least one external connect of said second semiconductor device chip.
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Specification