Surface emission laser and method of manufacturing the same

• US 5,703,898 A
• Filed: 12/08/1995
• Issued: 12/30/1997
• Est. Priority Date: 12/21/1994
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Ogura, Ichiro
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US08/569,060
• Time in Patent Office: 753 Days
• Field of Search: 372/96, 372/46, 372/45, 372/99, 437/129
• US Class Current: 372/96
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/2081 using special etching techniques

Abstract

A surface emission laser is formed by sequentially stacking an n-type semiconductor multilayer reflector, an n-type clad layer, an active layer, a p-type clad layer, and a p-type semiconductor multilayer reflector on a semiconductor substrate. The p-type semiconductor multilayer reflector is etched to form a mesa. An electrode is formed on at least on the mesa side surfaces and a portion of the mesa bottom surface. The thickness of a GaAs film as the mesa bottom surface of the p-type semiconductor multilayer reflector to which an etching process is stopped is set to be (1/4+n/2, where n is an integer) times the oscillation wavelength. A method of manufacturing the surface emission laser is also disclosed.

Claims

1. A surface emission laser having a semiconductor multilayer reflector of a first conductivity type, a clad layer of the first conductivity type, an active layer, a clad layer of a second conductivity type, and a semiconductor multilayer reflector of the second conductivity type, which are sequentially stacked on each other, wherein said semiconductor multilayer reflector of the second conductivity type has a mesa shape, an electrode is formed on mesa side surfaces and a portion of a mesa bottom surface, and one semiconductor film of said semiconductor multilayer reflector of the second conductivity type which serves as the mesa bottom surface has a thickness (1/4+n/2, where n is a positive integer) times an oscillation wavelength.

2. A surface emission layer according to claim 1, wherein a current from said mesa bottom surface spreads uniformly within said active layer.

3. A surface emission laser having an n-type semiconductor multilayer reflector, an n-type clad layer, an active layer, a p-type clad layer, and a p-type semiconductor multilayer reflector, which are sequentially stacked on a semiconductor substrate, wherein said p-type semiconductor multilayer reflector has a mesa shape, an electrode is formed on at least mesa side surfaces and a portion of a mesa bottom surface, and a GaAs film of said p-type semiconductor multilayer reflector which serves as the mesa bottom surface has a thickness (1/4+n/2, where n is a positive integer) times an oscillation wavelength.

4. A surface emission layer according to claim 3. wherein a current from said mesa bottom surface spreads uniformly within said active layer.

5. A method of manufacturing a surface emission laser comprising the steps of forming a resonator structure on a semiconductor substrate, said resonator structure having p- and n-type semiconductor multilayer reflectors on and under a p-n junction structure for producing an optical gain upon injection of a current, each of said reflectors being formed by alternately stacking semiconductor layers having different refractive indexes, forming a mesa by etching, and forming an electrode for current injection to cover said mesa, wherein a thickness of a semiconductor layer, of the semiconductor layers alternately stacked on each other to form said semiconductor multilayer reflector on said p-n junction structure etched on said semiconductor substrate, to which an etching process is stopped, is (1/4+n/2, where n is a positive integer) times an oscillation wavelength.

6. A method according to claim 5, wherein said semiconductor multilayer reflector on said p-n junction structure etched on said semiconductor substrate comprise a p-type semiconductor multilayer reflector, the semiconductor layers alternately stacked on each other comprise p-type AlAs layers and p-type GaAs layers, respectively and the semiconductor layer of the semiconductor layers to which an etching process is stopped comprise a p-type GaAs layer.

7. A method according to claim 5, wherein said p- and n-type semiconductor multilayer reflectors on and under said p-n junction structure for producing an optical gain upon injection of a current, each of said reflectors being formed by alternately stacking semiconductor layers having different refractive indexes, are formed by alternately stacking two types of semiconductor layers having different refractive indexes, and said reflectors are formed on said semiconductor substrate by epitaxial growth.