Semiconductor device formed using a catalyst element capable of promoting crystallization

• US 5,705,829 A
• Filed: 01/26/1996
• Issued: 01/06/1998
• Est. Priority Date: 12/22/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Takemura, Yasuhiko, Miyanaga, Akiharu
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Hardy, David B.
• Application Number:
  US08/592,513
• Time in Patent Office: 711 Days
• Field of Search: 257/66, 257/72, 257/69, 257/70, 257/75, 257/227, 257/257, 257/258
• US Class Current: 257/66
• CPC Class Codes: A61B 18/20 using laser
• CPC Class Codes: A61B 2018/20359 by movable mirrors, e.g. galvanometric
• CPC Class Codes: B23K 26/08 Devices involving relative movement between laser beam and workpiece
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively.

Claims

1. A semiconductor device comprising at least first and second thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film added with a catalyst for promoting a crystallization thereof, wherein a concentration of said catalyst in the semiconductor film of said first thin film transistor is different from that in the semiconductor film of the second thin film transistor.

2. The device of claim 1 wherein said catalyst comprises metal selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

3. The device of claim 1 wherein said catalyst comprises a material selected from Groups VIII, IIIb, IVb and Vb elements.

4. A semiconductor device comprising at least first and second thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film added with a catalyst for promoting a crystallization thereof,

wherein a concentration of said catalyst in the semiconductor film of said first thin film transistor is different from that in the semiconductor film of the second thin film transistor, and

wherein the semiconductor film of said first transistor has crystals extending in a direction perpendicular to the substrate while the semiconductor film of said second transistor has crystals extending in a direction parallel with the substrate.

5. The device of claim 4 wherein said catalyst comprises metal selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.

6. The device of claim 4 wherein said catalyst comprises a material selected from Groups VIII, IIIb, IVb and Vb elements.

7. An electro-optical device comprising:

a substrate having an insulated surface;

a peripheral circuit region having a first thin film transistor formed over said substrate, wherein said thin film transistor has a crystalline semiconductor film added with a catalyst for promoting a crystallization of said semiconductor film at a first concentration; and

a pixel circuit region having a second thin film transistor formed over said substrate, wherein said thin film transistor has a crystalline semiconductor film added with a catalyst for promoting a crystallization of said semiconductor film at a second concentration which is different from said first concentration.

8. The electro-optical device of claim 7 wherein said first concentration is larger than said second concentration.

9. The electro-optical device of claim 7 wherein the crystalline semiconductor film of said first transistor has a higher crystallinity than that of said second transistor.

10. The electro-optical device of claim 7 wherein the crystalline semiconductor film of said first transistor has crystal grains extending vertically with respect to the surface of substrate.

11. The electro-optical device of claim 7 wherein the crystalline semiconductor film of said second thin film transistor has crystal grains extending parallel with respect to the surface of the substrate.

12. The electro-optical device of claim 7 wherein the crystalline semiconductor film of said first thin film transistor has crystal grains extending vertically with respect to a direction along which carriers of the first transistor flow.

13. The electro-optical device of claim 7 wherein the crystalline semiconductor film of said second thin film transistor has crystal grains extending along a direction in which carriers of the second transistor flow.

14. An active matrix display device comprising:

a plurality of first thin film transistors arranged in a matrix form and formed on a substrate; and

a driving circuit comprising second thin film transistors formed on said substrate, said driving circuit including at least one of a correction memory, an input-port, a memory and a CPU,

wherein a channel region in both of said first and second thin film transistors comprises a crystallized semiconductor added with a catalyst element, which is capable of promoting crystallization of silicon.

15. The display device of claim 14 wherein said driving circuit further includes a shift register or a decoder.

16. An active matrix display device comprising:

a plurality of first thin film transistors arranged in a matrix form and formed on a substrate; and

a driving circuit comprising second thin film transistors formed on said substrate, said driving circuit including at least one of a correction memory, an input-port, a memory and a CPU,

wherein a channel region in both of said first and second thin film transistors comprises a crystallized semiconductor added with a catalyst element, which is capable of promoting crystallization of silicon, and

wherein the channel region in the second thin film transistor has a crystalline structure in which crystals extend in a direction parallel with a surface of said substrate.

17. An active matrix display device comprising:

a plurality of first thin film transistors arranged in a matrix form and formed on a substrate; and

a driving circuit comprising second thin film transistors formed on said substrate, said driving circuit including at least one of a correction memory, an input-port, a memory and a CPU,

wherein a channel region in both of said first and second thin film transistors comprises a crystallized semiconductor added with a catalyst element, which is capable of promoting crystallization of silicon, and

wherein the channel region in the second thin film transistor has a crystalline structure in which crystals extend in a direction perpendicular to a surface of said substrate.