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Method for operating a memory array

  • US 5,706,228 A
  • Filed: 02/20/1996
  • Issued: 01/06/1998
  • Est. Priority Date: 02/20/1996
  • Status: Expired due to Term
First Claim
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1. A method for operating a memory array that includes reading a selected memory cell comprising the steps of:

  • providing the memory array including a selected memory cell and an unselected memory cell, wherein;

    each of the selected and unselected memory cells has an isolation transistor and a floating gate transistor a drain terminal, and a source terminal;

    each of the isolation and floating gate transistors has a gate terminal; and

    the drain terminals of the selected and unselected memory cells are electrically connected to each other;

    applying a first voltage potential having a first polarity to the gate terminal of the floating gate transistor of the selected memory cell;

    applying a second voltage potential having the first polarity to the drain terminals of the selected and unselected memory cells; and

    applying a third voltage potential having the first polarity to the gate terminal of the floating gate transistor of the unselected memory cell.

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