Method for making an all-silicon capacitive pressure sensor

• US 5,706,565 A
• Filed: 09/03/1996
• Issued: 01/13/1998
• Est. Priority Date: 09/03/1996
• Status: Expired due to Term

• Current Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Original Assignee: Delco Electronics Corporation (General Motors Company)
• Inventors: Sparks, Douglas Ray, Baney, William J., Staller, Steven Edward, Chilcott, Dan Wesley, Siekkinen, James Werstler
• Primary Examiner(s): Chilcot, Richard
• Assistant Examiner(s): Oen, William L.
• Application Number:
  US08/707,107
• Time in Patent Office: 497 Days
• Field of Search: 29/25.41, 29/25.42, 29/621.1, 73/706, 73/715, 73/718, 73/724, 156/628, 156/657, 156/662, 437/901, 437/919, 437/921, 437/927
• US Class Current: 29/25.42
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.

Claims

1. A method for forming a capacitive pressure sensor, the method comprising the steps of:

providing a first semiconductor wafer having at least a portion thereof characterized by a first electrical conductivity;

forming a cavity in the first semiconductor wafer so as to expose a region of the semiconductor wafer that yields a fixed capacitor plate of the capacitive pressure sensor;

bonding a semiconductor diaphragm of the first electrical conductivity type to the semiconductor wafer such that the diaphragm overlies the fixed capacitor plate, is electrically insulated from the fixed capacitor plates, and forms a hermetic seal around the fixed capacitor plate, the diaphragm being a flexible capacitor plate of the capacitive pressure sensor;

wherein the flexible capacitor plate forms a gap with the fixed capacitor plate of up to about ten micrometers, such that a capacitive output signal of the capacitive pressure sensor is produced by changes in contact area between the diaphragm and the semiconductor wafer in response to pressure applied to the diaphragm.

2. A method as recited in claim 1 wherein the diaphragm is bonded to the semiconductor wafer to overlie a limited portion of the semiconductor wafer and yield an exposed surface portion of the semiconductor wafer, the method further comprising the step of forming a contact to the flexible capacitor plate in the exposed surface portion of the semiconductor wafer.

3. A method as recited in claim 1 wherein the diaphragm is caused to be of the first electrical conductivity type by doping with boron and germanium.

4. A method as recited in claim 1 further comprising the step of forming a doped region of the first electrical conductivity type in the region of the semiconductor wafer, the doped region forming the fixed capacitor plate of the capacitive pressure sensor.

5. A method as recited in claim 1 wherein the semiconductor wafer comprises a heavily-doped substrate and an overlying layer of a lightly-doped epitaxy or an oxide, and wherein the step of forming the cavity entails removing a portion of the overlying layer to expose a portion of the substrate, the portion of the substrate forming the fixed capacitor plate of the capacitive pressure sensor.

6. A method as recited in claim 1 wherein the semiconductor wafer comprises a heavily-doped substrate and an overlying oxide layer, and wherein the step of forming the cavity entails selectively growing the oxide layer on the substrate so as to form the cavity and leave exposed a portion of the substrate, the portion of the substrate forming the fixed capacitor plate of the capacitive pressure sensor.

7. A method as recited in claim 1 further comprising the step of forming a dielectric layer between the region of the substrate and the diaphragm so as to electrically insulate the flexible and fixed capacitor plates.

8. A method as recited in claim 7 wherein the dielectric layer is an oxide layer grown on the region of the substrate.

9. A method as recited in claim 1 wherein the semiconductor wafer is a first semiconductor wafer, and wherein the flexible capacitor plate is formed by a method comprising the steps of:

forming a second semiconductor wafer comprising a substrate and an epitaxial layer doped to be of the first electrical conductivity type;

bonding the second semiconductor wafer to the first semiconductor wafer such that the epitaxial layer contacts the first semiconductor wafer and overlies the underlying region of the substrate; and

etching the second semiconductor wafer to remove the substrate and leave the epitaxial layer to form the diaphragm and the flexible capacitor plate.

10. A method as recited in claim 9 further comprising the step of removing a portion of the epitaxial layer of the second semiconductor wafer to expose a surface portion of the first semiconductor wafer.

11. The capacitive pressure sensor formed by the method recited in claim 1, the capacitive pressure sensor being an all-silicon monolithic absolute pressure sensor.

12. A method for forming a capacitive pressure sensor, the method comprising the steps of:

providing a first semiconductor wafer characterized by a first electrical conductivity type;

forming a cavity in a surface of the first semiconductor wafer;

forming a doped region of the first electrical conductivity type in the cavity to yield a fixed capacitor plate of the capacitive pressure sensor;

forming a dielectric layer over the doped region;

forming a second semiconductor wafer comprising a substrate and an epitaxial layer doped to be of the first electrical conductivity type;

bonding the second semiconductor wafer to the first semiconductor wafer such that the epitaxial layer contacts the first semiconductor wafer and overlies the doped region;

etching the second semiconductor wafer to remove the substrate;

removing a portion of the epitaxial layer to expose a surface portion of the first semiconductor wafer so as to form a diaphragm that is electrically insulated from the fixed capacitor plates and forms a hermetic seal around the fixed capacitor plate, the diaphragm being a flexible capacitor plate of the capacitive pressure sensor;

wherein the flexible capacitor plate forms a gap with the fixed capacitor plate of about two to about seven micrometers, such that a capacitive output signal of the capacitive pressure sensor is produced by changes in contact area between the diaphragm and the semiconductor wafer in response to pressure applied to the diaphragm.