Test structure and method for performing burn-in testing of a semiconductor product wafer
First Claim
1. A method for manufacturing a test structure, the method comprising the steps of:
- providing a base layer having exposed conductive connection regions;
providing a plurality of segmented integrated circuits wherein the segmented integrated circuits have exposed conductive connection regions;
coupling the plurality of segmented integrated circuits to the base layer wherein the exposed conductive connection regions of the plurality of segmented integrated circuits are electrically coupled to the exposed conductive connection regions of the base layer;
forming a stabilizing layer which mechanically strengthens the plurality of segmented integrated circuits which are coupled to the base layer, wherein the stabilizing layer, plurality of segmented integrated circuits, and base layer now form the test structure; and
using the test structure to stimulate at least one integrated circuit.
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Accused Products
Abstract
A test structure and test methodology are taught herein wherein a test structure (10) is used to test an entire integrated circuit product wafer (44). The test structure (10) has a backing support wafer (39). A die attach compound (38) is used to attach a plurality of segmented individual test integrated circuits 28-34 to the backing support wafer (39). The plurality of test integrated circuits 28-34 have a top conductive bump layer (26). This conductive bump layer (26) is contacted to a thin film signal distribution layer (14) which contains conductive interconnects, conductive layers, and dielectric layers which route electrical signals as illustrated in FIG. 2 . The layer 14 also conductively connects to bumps (46) on a product wafer (44). In addition, leads (40) are coupled to conductive elements of the layer (14). An external tester is coupled via leads (40) to the integrated circuits (28) and (34) whereby the integrated circuits (28-34) burn-in or test integrated circuits on the product wafer (44) in an efficient and effective manner.
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Citations
37 Claims
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1. A method for manufacturing a test structure, the method comprising the steps of:
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providing a base layer having exposed conductive connection regions; providing a plurality of segmented integrated circuits wherein the segmented integrated circuits have exposed conductive connection regions; coupling the plurality of segmented integrated circuits to the base layer wherein the exposed conductive connection regions of the plurality of segmented integrated circuits are electrically coupled to the exposed conductive connection regions of the base layer; forming a stabilizing layer which mechanically strengthens the plurality of segmented integrated circuits which are coupled to the base layer, wherein the stabilizing layer, plurality of segmented integrated circuits, and base layer now form the test structure; and using the test structure to stimulate at least one integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for testing product integrated circuits using a test structure:
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providing a test structure wherein the test structure is a semiconductor wafer coupled to a plurality of segmented test integrated circuits where the plurality of segmented test integrated circuits are coupled to a signal distribution film; placing a product wafer containing product integrated circuits in contact with the signal distribution film; stimulating the product integrated circuits via electrical signals provided from the plurality of segmented test integrated circuits to the product integrated circuits via the signal distribution film; identifying which product integrated circuits are failing product integration circuits in response to the step of stimulating; and dicing and packaging for use the product integrated circuits which are not falling product integrated circuits.
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24. A method for manufacturing a test structure, the method comprising the steps of:
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providing a silicon mold; forming a dielectric layer on the silicon mold; forming product wafer contact openings in the first dielectric layer; forming at least one conductive layer of material overlying the first dielectric layer, the at least one conductive layer forming product wafer contact areas through the product wafer contact openings; forming additional dielectric layers as are needed to isolate portions of the at least one conductive layer of material; defining top portions of the at least one conductive layer of material as test structure contact areas; providing segmented test integrated circuits which have a top layer of conductive bumps and a backside; attaching segmented test integrated circuits to the test structure contact areas via the conductive bumps of the segmented test integrated circuits; attaching a support wafer to the backside of each of the segmented test integrated circuits; attaching conductive leads to conductive lead areas of the at least one conductive layer of material; and removing the silicon mold to expose the product wafer contact areas so that the segmented test integrated circuits can communicate electrical signals through the at least one conductive layer of material to the product wafer contact areas. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A method for forming a multi-chip module, the method comprising the steps of:
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providing a base substrate; forming transistors and conductive interconnects on top of the substrate the conductive interconnects having top-level contact areas; contacting conductive members of a singulated integrated circuit to the top-level contact areas so that circuitry on the integrated circuit can electrically communicate with the transistors; removing a portion of the base substrate to form a remaining base substrate from the base substrate; and packaging the remaining base substrate, transistors, and singulated integrated circuit in an integrated circuit package which contains conductors that connects to one or more of the singulated integrated circuit or the transistors. - View Dependent Claims (32, 33, 34, 35, 36, 37)
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Specification