Method for producing a semiconductor device having a semiconductor layer of SiC by implanting

• US 5,710,059 A
• Filed: 04/24/1996
• Issued: 01/20/1998
• Est. Priority Date: 03/27/1996
• Status: Expired due to Term

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: ABB Research Ltd. (ABB Ltd.)
• Inventors: Rottner, Kurt
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/636,942
• Time in Patent Office: 636 Days
• Field of Search: 437/30, 437/100, 437/149, 437/150, 437/151, 437/933, 437/934, 148/DIG. 148, 148/DIG. 151
• US Class Current: 438/547
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 29/6606 the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices

Abstract

A method for producing a semiconductor device comprises a step of implanting first conductivity type impurity dopants of at least two different elements in a semiconductor layer being doped according to a second opposite conductivity type, and after that anneal the semiconductor layer at such a high temperature that one of said elements is diffusing slowly into the semiconductor layer and the other is diffusing rapidly thereinto.

Claims

1. A method for producing a semiconductor device having a semiconductor layer of SiC with at least a pn-junction therein, comprising the steps of:

a) implanting an impurity dopant of a first conductivity type, into said semiconductor layer being doped according to a second opposite conductivity type for forming a first type doped near surface layer in said semiconductor layer and

b) annealing said semiconductor layer at a high temperature for making the implanted impurity dopants electrically active, wherein in step b) said annealing is carried out at such a high temperature that at least a portion of said dopants diffuses into the non-implanted sub-layer of said semiconductor layer following said near surface layer, and wherein in step a) first conductivity type impurity dopants of at least two different elements are implanted in the semiconductor layer and wherein at least one of said elements is slowly diffusing in SiC at said annealing temperature for retaining a high doping of said near surface layer after annealing to form a good ohmic contact to said semiconductor layer and at least one of said elements is rapidly diffusing in SiC at said annealing temperature for locating a pn junction so created at a considerable distance from said near surface layer.

2. A method according to claim 1, wherein first conductivity type impurity dopants of two different elements are implanted in said semiconductor layer in step a).

3. A method according to claim 1 wherein p-type impurity dopants are implanted in said semiconductor layer in step a).

4. A method according to claim 1, wherein said slowly and rapidly diffusing elements implanted in step a) are Group 3B-elements.

5. A method according to claim 3 wherein boron is implanted in step a) as said rapidly diffusing element.

6. A method according to claim 3, wherein beryllium is implanted in step a) as said rapidly diffusing element.

7. A method according to claim 3 wherein aluminum is implanted in step a) as said slowly diffusing element.

8. A method according to claim 3, wherein gallium is implanted in step a) as said slowly diffusing element.

9. A method according to claim 1, wherein said annealing temperature in step b) is selected so as to make a certain implanted impurity dopant one of slowly and rapidly diffusing in said semiconductor layer of SiC.

10. A method according to claim 1, wherein said annealing in step b) is carried out at a temperature above 1300°

C.

11. A method according to claim 1, wherein said annealing in step b) is carried out at a temperature above 1650°

C.

12. A method according to claim 1, wherein at least said slowly diffusing element is in step a) implanted at such a dose that said near surface layer becomes highly doped after said annealing step.

13. A method according to claim 1, wherein both said at least one slowly diffusing element and said at least one rapidly diffusing element are in step a) implanted at such a dose that said near surface layer becomes highly doped of both of them before the annealing step is carried out.

14. A method according to claim 12 wherein said dose corresponds to a concentration above 10¹⁹ cm^-3.