Silicon oxime film
First Claim
Patent Images
1. A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen and has a thickness of about 200 Å
to about 600 Å
.
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Abstract
A silicon oxime film is formed by plasma enhanced chemical vapor deposition. The silicon oxime film is useful as an anti-reflection layer during photolithography, as an etch stop, and as a protection layer.
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Citations
101 Claims
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1. A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen and has a thickness of about 200 Å
to about 600 Å
. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 36, 37, 38, 39, 40, 41)
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen and has a thickness of about 200 Å
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15. A method of producing a film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) :
- Nx Oy ;
Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275°
C. to about 475°
C. and at a pressure of about 1 to about 10 Torr, wherein the silicon oxime has a thickness of about 100 Å
to about 600 Å
. - View Dependent Claims (16)
- Nx Oy ;
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17. A method of forming a film comprising silicon oxime having the formula of Si.sub.(1-x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy ;
Hz on a substrate by plasma enhanced chemical vapor deposition, wherein deposition is conducted at a temperature of about 275°
C. to about 475°
C., and a pressure of from about 1 to about 10 torr, and wherein said silicon oxime layer has a thickness of about 200 Å
to about 600 Å
. - View Dependent Claims (18, 19, 20, 21, 22, 70, 71, 72, 73, 74, 75, 76, 77, 78)
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy ;
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23. A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1 x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275°
C. to about 475°
C., wherein the silicon oxime comprises about 10-20 atom percent hydrogen and the layer has a thickness of about 200 Å
to about 600 Å
. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275°
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42. A multilayer film comprising:
- a semiconductive layer comprising polycrystalline, microcrystalline, and/or amorphous silicon; and
a layer of silicon oxime thereon, wherein the silicon oxime has the formula Si.sub.(1-x-y-z) Nx Oy ;
Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51)
- a semiconductive layer comprising polycrystalline, microcrystalline, and/or amorphous silicon; and
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52. A multilayer film comprising:
- a conductive layer comprising a barrier layer of titanium, titanium nitride or titanium-tungsten, a layer of a conductive material thereon; and
a layer of silicon oxime on the conductive layer, wherein the silicon oxime has the formula Si.sub.(1-x-y-z) Nx Oy ;
Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively. - View Dependent Claims (53, 54, 55, 56, 57, 58, 59, 60, 61)
- a conductive layer comprising a barrier layer of titanium, titanium nitride or titanium-tungsten, a layer of a conductive material thereon; and
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62. A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a semiconductive substrate, comprising polycrystalline, microcrystalline and/or amorphous silicon, under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms.
- View Dependent Claims (63, 64, 65, 66, 67, 68, 80, 81, 82)
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69. A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen the layer of silicon oxime has a light reflectivity at 365 nm not greater than 2%.
- View Dependent Claims (79)
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83. A method of producing a film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy :
- Hx, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275°
C. to about 475°
C. and at a pressure of about 1 to about 10 Torr, wherein the silicon oxime has a light reflectivity at 365 nm not greater than 2%. - View Dependent Claims (84)
- Hx, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275°
-
85. A method of forming a film comprising silicon oxime having the formula of Si.sub.(1-x-y-z) Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy ;
Hz on a substrate by plasma enhanced chemical vapor deposition, wherein deposition is conducted at a temperature of about 275°
C. to about 475°
C., and a pressure of from about 1 to about 10 torr, and the silicon oxime layer has a light reflectivity at 365 nm not greater than 2%. - View Dependent Claims (86, 87, 88, 89, 90)
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy ;
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91. A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z)Nx Oy :
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275°
C. to about 475°
C., wherein the silicon oxime comprises about 10-20 atom percent hydrogen and the layer has a light reflectivity at 365 nm nut greater than 2%. - View Dependent Claims (92, 93, 94, 95, 96, 97, 98, 99, 100, 101)
- Hz, wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275°
Specification