Method and equipment for growing thin films

• US 5,711,811 A
• Filed: 10/02/1996
• Issued: 01/27/1998
• Est. Priority Date: 11/28/1994
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: Mikrokemia Oy
• Inventors: Soininen, Pekka, Lindfors, Sven, Suntola, Tuomo
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US08/682,703
• Time in Patent Office: 482 Days
• Field of Search: 118/719, 118/725, 118/715
• US Class Current: 118/719
• CPC Class Codes: C23C 10/06 using gases
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: C23C 8/06 using gases C23C8/36 takes precedence
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

The invention relates to equipment for growing a thin film onto a substrate. The equipment suited to implement the invention comprises a reaction space having a reaction chamber therein into which a substrate is placed and is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. The equipment further comprises recesses/openings communicating with the reaction space to form gas inflow and outflow channels. The reactants are fed in the form of vapor-phase pulses repeatedly and alternately into the reaction space through the inflow channels, each reactant separately from its own source. The vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. The gaseous reaction products and possible excess reactants are removed in gas phase from the reaction space via the outflow channels.

Claims

1. An apparatus for growing thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants to form a solid-state thin film on the substrate, said apparatus comprising:

a reaction space into which the substrate is disposed, said reaction space having a reaction chamber formed therein;

a plurality of inflow channels communicating with said reaction space, said inflow channels being suited for feeding the reactants employed in a thin-film growth process into said reaction space; and

a plurality of outflow channels communicating with said reaction space, said outflow channels being suited for the outflow of reaction products and excess amounts of reactants from said reaction space, wherein the apparatus comprises a plurality of vertically or horizontally stacked planar elements, of which at least two are mutually identical, and in which said reaction chamber is machined and said inflow and outflow channels are formed.

2. The apparatus of claim 1, wherein the apparatus comprises at least two reaction chambers for growing at least two thin films simultaneously.

3. The apparatus of claim 1, wherein the edges areas of said plurality of planar elements have openings formed therein, said openings being perpendicular to the plane of said respective planar element, said openings extending through said respective planar element and forming said inflow and outflow channels of said reaction space when said planar elements are stacked vertically or horizontally.

4. The apparatus of claim 3, wherein the center areas of said plurality of planar elements have recesses formed therein, said recesses being formed in the plane of said planar elements, wherein said recesses form said reaction chamber of said reaction space when said planar elements are stacked vertically or horizontally.

5. The apparatus of claim 4, wherein said plurality of planar elements, when stacked vertically or horizontally, provide in the spaces formed by said recesses and said openings, at least one narrow slit acting as a gas flow restricter for said gas flow passing through said reaction space.

6. The apparatus of claim 5, wherein said gas flow restricter is comprised of a plurality of parallel slits.

7. The apparatus of claim 5, wherein said narrow slit is formed in a wall area of said planar elements disposed between said recesses and said openings.

8. The apparatus of claim 5, wherein a plurality of adaptable intermediate planar elements are disposed between said vertically or horizontally stacked planar elements, said intermediate planar elements having a thickness corresponding to the desired height said slit acting as said gas flow restricter in said reaction space.

9. The apparatus of claim 4, wherein said recesses are extended through the entire thickness of said planar element forming in said planar elements a central opening in which the substrate can be located.

10. The apparatus of claim 9, wherein the sides of said central opening of said planar element comprise projecting brackets configured to hold the substrate.

11. The apparatus of claim 9, wherein in said reaction space formed from said vertically or horizontally stacked planar elements, the broad walls of said reaction chamber are formed by a plurality of substrates adapted to the central openings of said planar elements.

12. The apparatus of claim 1, further comprising an encircling suction groove disposed in the surface of and close to the edges of said planar elements, said suction groove used to collect any gas leaks to provide an inactive gas shield.

13. The apparatus of claim 12, wherein said suction groove is adapted to communicate with said outflow channel.

14. The apparatus of claim 1, wherein said vertically or horizontally stackable planar elements are designed for assembly on a support base incorporating a gas inflow channel for the gas to be introduced into said reaction space, said gas inflow channel designed to allow the gas flow to be homogenized therein.

15. The apparatus of claim 1, wherein the number of vertically or horizontally stackable planar elements is between 2 and 100.

16. The apparatus of claim 1, wherein the apparatus comprises at least two of said inflow channels and at least two of said outflow channels, and wherein said inflow channels and said outflow channels are disposed to the opposite ends of the substrate, whereby the opening of one of said outflow channels for one reactant group is disposed at the same end of the substrate as the opening of one of said inflow channels for another reactant group, and vice versa.

17. The apparatus of claim 16, wherein vapor-phase pulses can be fed onto the substrate alternately from opposite directions.