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Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes

  • US 5,711,812 A
  • Filed: 06/06/1995
  • Issued: 01/27/1998
  • Est. Priority Date: 06/06/1995
  • Status: Expired due to Term
First Claim
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1. Apparatus for accomplishing PLAsma Doping (PLAD) ion implantation comprising:

  • an electrode enclosed in a vacuum chamber;

    a target disposed upon said electrode;

    means for maintaining a plasma having dopant ions at an implantation surface of said target;

    a concentric structure of suitably conductive material being electrically isolated from said target bearing electrode and disposed so as to surround said electrode while being sufficiently close to said target; and

    means for separately biasing said electrode concurrently with said concentric structure in order to provide adjustable bias variation between said electrode and said structure capable of providing dose uniformity during said PLAD ion implantation of said target.

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