Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes

• US 5,711,812 A
• Filed: 06/06/1995
• Issued: 01/27/1998
• Est. Priority Date: 06/06/1995
• Status: Expired due to Term

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Associates, Inc. (Siemens AG)
• Inventors: Kissick, Michael William, Malik, Shamim Muhammad, Sheng, Tienyu Terry, Chapek, David LeRoy, Felch, Susan Benjamin
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): CHANG, JONI YUK YING
• Application Number:
  US08/469,401
• Time in Patent Office: 966 Days
• Field of Search: 118/723 E, 118/723 I, 118/723 IR, 118/723 MP, 204/298.06, 204/298.34, 250/492.2
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32697 Electrostatic control

Abstract

An apparatus for improving dose uniformity in the PLAsma Doping (PLAD) ion implantation of a target material is described. By providing means for simultaneously biasing both the electrode, upon which the target is disposed, and a separately biasable concentric structure introduced about the electrode and sufficiently close to the target, together with means for adjustable bias variation between the electrode and the structure one can sufficiently adjust the shape of the implantation plasma, e.g. induced electric field and plasma sheath thickness, in order to effectively provide a uniform dose distribution during PLAD ion implantation processes.

Claims

1. Apparatus for accomplishing PLAsma Doping (PLAD) ion implantation comprising:

an electrode enclosed in a vacuum chamber;

a target disposed upon said electrode;

means for maintaining a plasma having dopant ions at an implantation surface of said target;

a concentric structure of suitably conductive material being electrically isolated from said target bearing electrode and disposed so as to surround said electrode while being sufficiently close to said target; and

means for separately biasing said electrode concurrently with said concentric structure in order to provide adjustable bias variation between said electrode and said structure capable of providing dose uniformity during said PLAD ion implantation of said target.

2. Apparatus in accordance with claim 1 wherein said target is a wafer having an edge region extending over said electrode so that said concentric structure is disposed beneath said wafer edge region.

3. Apparatus in accordance with claim 1 wherein said means for separately biasing further comprises:

a pulser having a voltage divider in order to bias said electrode concurrently with said concentric structure.

4. Appartus in accordance with claim 1 wherein said means for separately biasing further comprises:

separate pulsers for concurrently biasing said electrode and said concentric structure.

5. Apparatus in accordance with claim 1 wherein said means for separately biasing further comprises:

a means for controlling said adjustable bias variation between said electrode and said structure in order to adjust dose distribution during said PLAD ion implantation of said target surface.

6. Apparatus in accordance with claim 1 wherein said concentric structure further comprises:

a plurality of components said components being separately biasable in order to fine tune bias adjustment between said electrode and said corresponding components of said structure in order to provide further adjustability of dose distribution.

7. Apparatus in accordance with claim 1 wherein said conductive material is a low sputtering coefficient material which is chemically inert to said plasma species.

8. Apparatus in accordance with claim 1 wherein said conductive material includes silicon, carbon, or nickel/nickel clad materials.