Process for depositing a conductive thin film upon an integrated circuit substrate

• US 5,711,858 A
• Filed: 06/30/1995
• Issued: 01/27/1998
• Est. Priority Date: 04/12/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Kontra, Richard Steven, Sullivan, Timothy Dooling, Ryan, James Gardner, Licata, Thomas John
• Primary Examiner(s): NGUYEN, NAM X
• Application Number:
  US08/496,999
• Time in Patent Office: 942 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.17, 204/192.3, 204/298.11, 204/298.13
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/046 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/53219 Aluminium alloys
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An improved process for depositing a conductive thin film upon an integrated circuit substrate by collimated sputtering is disclosed. The sputtered films are alloys of aluminum; a preferred alloying metal is magnesium. The sputtered films of the invention have a more uniform orientation of grains than sputtered aluminum copper silicon alloy films. Such processes are especially useful in the fabrication of integrated circuit devices having aluminum alloy wiring elements.

Claims

1. In a process for depositing a metal film from a deposition source onto an integrated circuit substrate, said process comprising the step of using a means for collimating the direction of a metal striking the substrate, the improvement wherein said metal film comprises a magnesium-containing aluminum alloy film having greater than about 75 volume % of grains having a (111) orientation, and wherein greater than about 63% of said grains having a (111) orientation have a tilt angle of less than about 10 degrees.

10. The process of claim 1 wherein the concentration of said magnesium in said alloy is less than the solubility limit of said magnesium in said alloy at the temperature of said alloy during the deposition process.

2. In a process for depositing a metal film from a deposition source onto an integrated circuit substrate, said process comprising the step of using a means for collimating the direction of a metal striking the substrate, the improvement wherein said metal film comprises a magnesium-containing aluminum alloy film consisting of grains lacking incoherent precipitates within the deposited metal grains.

3. In a process for depositing a metal film from a deposition source onto an integrated circuit substrate, said process comprising the step of using a means for collimating the direction of a metal striking the substrate, the improvement wherein said metal film comprises a magnesium-containing aluminum alloy film consisting of grains having coherent precipitates within the deposited metal grains.

4. A process for sputter depositing an aluminum alloy film onto an integrated circuit substrate comprising the steps of:

a) obtaining a deposition source comprising aluminum alloyed with magnesium; and

b) using a collimator deposed between said deposition source and said substrate, sputter depositing material from said deposition source onto said substrate to form said aluminum alloy film.

5. The process of claim 4 wherein the magnesium comprises from about 0.05 to about 10 percent by weight of the aluminum alloy.

6. The process of claim 4 wherein the magnesium comprises from about 1 to about 3 percent by weight of the aluminum alloy.

7. The process of claim 4 wherein the magnesium comprises about 2 percent by weight of the aluminum alloy.

8. The process of claim 4 wherein greater than about 75 volume % of the aluminum alloy film consists of grains having a (111) orientation and wherein greater than about 63% of said grains having a (111) orientation have a tilt angle of less than about 10 degrees.

9. A process for depositing a magnesium-containing aluminum alloy onto an integrated circuit substrate comprising the steps of:

providing a deposition source for depositing a magnesium-containing aluminum alloy; and

using means for controlling the direction of the alloy striking an integrated circuit substrate, wherein the controlling means is means for collimating.

11. The process of claim 9 wherein the magnesium comprises from about 0.05 to about 10 percent by weight of the aluminum alloy.

12. The process of claim 9 wherein the magnesium comprises from about 1 to about 3 percent by weight of the aluminum alloy.

13. The process of claim 9 wherein the magnesium comprises about 2 percent by weight of the aluminum alloy.

14. The process of claim 9 wherein greater than about 75 volume % of the deposited aluminum alloy consists of grains having a (111) orientation and wherein greater than about 63% of said grains having a (111), orientation have a tilt angle of less than about 10 degrees.

15. The process of claim 9 wherein greater than about 75 volume % of the deposited aluminum alloy consists of grains having a (111) orientation and wherein greater than about 63% of said grains having a (111) orientation have a tilt angle of less than about 5 degrees.

16. The process of claim 9 wherein greater than about 90 volume % of the deposited aluminum alloy consists of grains having a (111) orientation and wherein greater than about 90% of said grains having a (111) orientation have a tilt angle of less than about 4 degrees.

17. The process of claim 9 wherein the aluminum alloy consists of grains lacking incoherent precipitates within the deposited metal grains.

18. The process of claim 9 wherein the aluminum alloy consists of grains having coherent precipitates within the deposited metal grains.