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Wafer processing using thermal nitride etch mask

  • US 5,711,891 A
  • Filed: 09/20/1995
  • Issued: 01/27/1998
  • Est. Priority Date: 09/20/1995
  • Status: Expired due to Term
First Claim
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1. A method of wafer processing comprising:

  • forming a layer of silicon nitride ≦

    50 angstroms thick by a thermal nitridation process upon a silicon substrate;

    patterning said layer of silicon nitride to expose portions of said substrate; and

    etching said exposed portions of said substrate to produce at least one v-shaped groove.

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