Semiconductor heterojunction material

• US 5,714,014 A
• Filed: 06/13/1995
• Issued: 02/03/1998
• Est. Priority Date: 09/12/1994
• Status: Expired due to Term

• Current Assignee: Showa Denko KK (Resonac Holdings Corp.)
• Original Assignee: Showa Denko KK (Resonac Holdings Corp.)
• Inventors: Horikawa, Shunji
• Primary Examiner(s): KUNEMUND, ROBERT M
• Application Number:
  US08/489,955
• Time in Patent Office: 966 Days
• Field of Search: 437/105, 437/107, 437/126, 437/129, 437/133, 148/33.4, 148/33.5, 148/33.6, 148/33.1, 148/33, 117/84
• US Class Current: 148/33
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01S 5/32 comprising PN junctions, e.g. hetero- or double- heterostructures H01S5/34, H01S5/36 take precedence
• CPC Class Codes: H01S 5/321 having intermediate bandgap layers

Abstract

A semiconductor heterojunction material includes a heterojunction configured by successively overlaying first, middle and third layers of semiconductor, some or all of the constituent elements of the first and third layers being different and the middle layer containing all elements contained in the first and third layers.

Claims

1. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of GaAs and AlGaInP, the middle layer having an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

2. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of GaAs and AlInP, the middle layer having an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

3. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of AlGaAs and AlGaInP, the middle layer having an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

4. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of AlGaAs and AlInP, the middle layer having an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

5. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of GaAs and AlGaInP, the middle layer being graded continuously or stepwise in elemental composition between its heterojunction interface with one of the first and third layers and its heterojunction interface with the other thereof.

9. A semiconductor heterojunction material according to claim 5, wherein the middle layer has an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

6. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of GaAs and AlInP, the middle layer being graded continuously or stepwise in elemental composition between its heterojunction interface with one of the first and third layers and its heterojunction interface with the other thereof.

10. A semiconductor heterojunction material according to claim 6, wherein the middle layer has an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

7. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of AlGaAs and AlGaInP, the middle layer being graded continuously or stepwise in elemental composition between its heterojunction interface with one of the first and third layers and its heterojunction interface with the other thereof.

11. A semiconductor heterojunction material according to claim 7, wherein the middle layer has an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.

8. A semiconductor heterojunction material comprising a heterojunction configured by successively overlaying first, middle and third layers of semiconductors, the middle layer consisting of AlGaInPAs and the other two layers consisting of AlGaAs and AlInP, the middle layer being graded continuously or stepwise in elemental composition between its heterojunction interface with one of the first and third layers and its heterojunction interface with the other thereof.

12. A semiconductor heterojunction material according to claim 8, wherein the middle layer has an impurity concentration within the range of approximately 1×

10¹⁷ cm^-3 and 2×

10¹⁸ cm^-3.