Method of forming silicon nitride with varied hydrogen concentration

• US 5,714,408 A
• Filed: 12/13/1996
• Issued: 02/03/1998
• Est. Priority Date: 12/14/1995
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Tanaka, Yasushi, Kuroyanagi, Akira, Ichikawa, Yuji, Souki, Yasuo, Shioya, Hirohito, Kubokoya, Ryouichi
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): WHIPPLE, MATTHEW LAVERNE
• Application Number:
  US08/766,619
• Time in Patent Office: 417 Days
• Field of Search: 437/241, 148/DIG. 114
• US Class Current: 438/761
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: Y10S 148/114 Nitrides of silicon

Abstract

On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.

Claims

1. A method for manufacturing a semiconductor device, in which a transistor having a gate insulation film is formed in a semiconductor substrate of which surface is covered with a plasma SiN film formed by a plasma CVD method directed to forming a SiN film on said semiconductor substrate while supplying ammonium gas and silane family gas, the method comprising the steps of:

forming a low hydrogen content plasma SiN film by supplying the ammonium gas and the silane family gas while increasing at least one of an ammonium gas amount and a silane family gas amount; and

laminating on said low hydrogen content plasma SiN film a plasma SiN film that is higher in content of hydrogen than said low hydrogen content plasma SiN film by supplying the ammonium gas and the silane family gas at a fixed flowrate.

2. A method for manufacturing a semiconductor device as set forth in claim 1, wherein said step of forming said low hydrogen content plasma SiN film is performed under a reduced pressure in a state where electric discharge is possible.

3. A method for manufacturing a semiconductor device as set forth in claim 1, wherein said step of forming said low hydrogen content plasma SiN film is performed in a state where the ammonium gas is being supplied at the fixed flowrate and the silane family gas is supplied while a flowrate thereof is being increased.

4. A method for manufacturing a semiconductor device as set forth in claim 1, wherein said step of forming said low hydrogen content plasma SiN film is performed such that the ammonium gas and the silane gas are supplied while a flowrate of at least one of the ammonium gas and the silane gas is being increased linearly.

5. A method for manufacturing a semiconductor device as set forth in claim 1, wherein said step of forming said low hydrogen content plasma SiN film is performed such that the ammonium gas and the silane gas are supplied while a flowrate of the silane gas is being increased stepwise.

6. A method for manufacturing a semiconductor device as set forth in claim 1, wherein said step of forming said low hydrogen content plasma SiN film controls flowrate of the ammonium gas and the silane gas so that said low hydrogen content plasma SiN film has a amount of Si-H bonds of 6×

10²¹ /cm³ or less.

7. A method for manufacturing a semiconductor device as set forth in claim 1, wherein said step of forming said low hydrogen content plasma SiN film supplies larger amount of nitrogen gas than that supplied by said step for laminating.

8. A method for manufacturing a semiconductor device as set forth in claim 7, wherein said step of forming said low hydrogen content plasma SiN film supplies smaller amount of the ammonium gas than that supplied by said step for laminating.

9. A method for manufacturing a semiconductor device as set forth in claim 1, further comprising the step of:

applying a power source voltage in a state where nitrogen gas is being supplied before causing the silane family gas to flow by said step for forming, in order to execute surface toughening processing by means of plasma of nitrogen on a surface of an underlying layer on which said low hydrogen content plasma SiN film is formed.

10. A method for manufacturing a semiconductor device as set forth in claim 9, wherein said step of forming said low hydrogen content plasma SiN film supplies larger amount of the nitrogen gas than that supplied by said step for laminating.

11. A method for manufacturing a semiconductor device as set forth in claim 10, wherein said step of forming said low hydrogen content plasma SiN film supplies smaller amount of the ammonium gas than that supplied by said step for laminating.