Method of forming silicon nitride with varied hydrogen concentration
First Claim
1. A method for manufacturing a semiconductor device, in which a transistor having a gate insulation film is formed in a semiconductor substrate of which surface is covered with a plasma SiN film formed by a plasma CVD method directed to forming a SiN film on said semiconductor substrate while supplying ammonium gas and silane family gas, the method comprising the steps of:
- forming a low hydrogen content plasma SiN film by supplying the ammonium gas and the silane family gas while increasing at least one of an ammonium gas amount and a silane family gas amount; and
laminating on said low hydrogen content plasma SiN film a plasma SiN film that is higher in content of hydrogen than said low hydrogen content plasma SiN film by supplying the ammonium gas and the silane family gas at a fixed flowrate.
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Abstract
On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.
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Citations
11 Claims
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1. A method for manufacturing a semiconductor device, in which a transistor having a gate insulation film is formed in a semiconductor substrate of which surface is covered with a plasma SiN film formed by a plasma CVD method directed to forming a SiN film on said semiconductor substrate while supplying ammonium gas and silane family gas, the method comprising the steps of:
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forming a low hydrogen content plasma SiN film by supplying the ammonium gas and the silane family gas while increasing at least one of an ammonium gas amount and a silane family gas amount; and laminating on said low hydrogen content plasma SiN film a plasma SiN film that is higher in content of hydrogen than said low hydrogen content plasma SiN film by supplying the ammonium gas and the silane family gas at a fixed flowrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification