Electrostatic discharge protection device

• US 5,714,784 A
• Filed: 10/19/1995
• Issued: 02/03/1998
• Est. Priority Date: 10/19/1995
• Status: Expired due to Term

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Ker, Ming-Dou, Wu, Chung-Yu, Huang, Chien-Chang, Wu, Chau-Neng, Yu, Ta-Lee
• Primary Examiner(s): LOKE, STEVEN HO YIN
• Application Number:
  US08/545,286
• Time in Patent Office: 838 Days
• Field of Search: 257/360, 257/401, 257/205, 257/206
• US Class Current: 257/360
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1087 characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention is an electronic device, and more particularly an MOS transistor. A square-type layout style is used to realize the MOS device. By using the present layout style, the output driving/sinking capability of output buffers as well as the ESD protection capability of NMOS and PMOS devices in output buffers or input ESD protection circuits are significantly improved within smaller layout area. Both drain diffusion area and drain-to-bulk parasitic capacitance at the output node are reduced by this square-type layout. Devices using the present layout style can be assembled to form larger, rectangular (or square) and similarly functioning devices. Thus, the present square-type layout style is very attractive to submicron CMOS VLSI/ULSI in high-density and high-speed applications.

Claims

1. An electrostatic discharge protected device formed on a substrate, comprising:

a first part being loop-shaped;

a second part located in and separated from the first looped part;

a third part being loop-shaped and positioned between the first and second parts for conducting the first and second parts in a first instance and for isolating the first and second parts in a second instance;

a loop-shaped inner diffusion area for biasing the substrate, said inner diffusion area surrounding said first, second and third parts, and being the same diffusion type as the substrate; and

a loop-shaped outer diffusion area working as a latchup guard ring, said outer diffusion area surrounding said loop-shaped inner diffusion area, and being of an opposite diffusion type than the substrate.

2. A device as set out in claim 1 wherein the substrate comprises a semiconductor substrate and said device comprises a MOS transistor fabricated on said semiconductor substrate.

3. A device according to claim 2 wherein said first instance is an on state and said second instance is an off state.

4. A device according to claim 3 wherein said first, second and third parts are positioned symmetrically with respect to a central line.

5. A device as set out in claim 4 wherein said second part is a drain region which is square in shape;

said third part is a gate region surrounding said drain region and formed into a squared loop; and

said first part is a source region, formed into a squared loop, and surrounds said gate region and said drain region, in which said inner diffusion and said outer diffusion are formed into square loops.

6. A device as set out in claim 5 comprising a plurality of MOS transistors assembled to form a larger, square and similarly functioning device.

7. A device as set out in claim 5 comprising a plurality of MOS transistors assembled to form a larger, rectangular and similarly functioning device.

8. A device as set out in claim 1 wherein said device comprises a NMOS device, said inner diffusion is a P⁺ diffusion to be electrically connected to ground and said outer diffusion is an N⁺ diffusion to be electrically connected to a voltage supply.

9. A device as set out in claim 1 wherein said device comprises a PMOS device, said inner diffusion is an N⁺ diffusion to be electrically connected to a voltage supply and said outer diffusion is a P⁺ diffusion to be electrically connected to ground.