×

Semiconductor device having an insulated gate field effect thin film transistor

  • US 5,717,224 A
  • Filed: 09/06/1996
  • Issued: 02/10/1998
  • Est. Priority Date: 04/29/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device formed on an insulating substrate comprising:

  • a semiconductor region having a source, a drain and a channel located between said source and said drain;

    a gate electrode provided adjacent to said channel with a gate insulating layer therebetween;

    a first interlayer insulating film comprising an organic resin film or a multilayer of a silicon oxide layer and an organic resin layer provided over said gate electrode;

    a source electrode connected to said source and provided on said first interlayer insulating film, said source electrode functioning to shield at least said channel from external light; and

    a second interlayer insulating film formed on said first interlayer insulating film wherein a portion of said source electrode is interposed between said first and second interlayer insulating film,wherein said second interlayer insulating film comprises a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×