Photoelectric transducer
First Claim
1. A photoelectric transducer comprising a first electrode, a second electrode constituted of an antireflection layer, and a photoelectric semiconductor layer between the first electrode and the second electrode, wherein said antireflection layer comprises a laminated member of a first thin conductive oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm and a second thin conductive oxide layer containing a second oxide of a second crystalline oxide of grain size of not larger than 20 nm, wherein the thickness d of the laminate is equal to the wavelength of light absorbed by the photoelectric semiconductor layer divided by 4n, where n is the composite refractive index of the layers of the antireflection laminate.
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Abstract
A photoelectric transducer is provided which comprises a first electrode, a second electrode constituted of an antireflection layer, and a semiconductor layer between the first electrode and the second electrode. The antireflection layer comprises a laminated member of a first tin oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm, and a second thin oxide layer containing a second oxide of a second thin oxide layer containing a second crystalline oxide of grain size of not larger than 20 nm.
36 Citations
32 Claims
- 1. A photoelectric transducer comprising a first electrode, a second electrode constituted of an antireflection layer, and a photoelectric semiconductor layer between the first electrode and the second electrode, wherein said antireflection layer comprises a laminated member of a first thin conductive oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm and a second thin conductive oxide layer containing a second oxide of a second crystalline oxide of grain size of not larger than 20 nm, wherein the thickness d of the laminate is equal to the wavelength of light absorbed by the photoelectric semiconductor layer divided by 4n, where n is the composite refractive index of the layers of the antireflection laminate.
- 19. An antireflection layer supported on a base member, adapted for use with a photoelectric semiconductor layer, comprising a laminated member of a first thin conductive oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm, and a second thin conductive oxide layer containing a second crystalline oxide of grain size of not larger than 20 nm, wherein the thickness d of the laminate is equal to the wavelength of light absorbed by the photoelectric semiconductor layer divided by 4n, where n is the composite refractive index of the layers of the antireflection laminate.
- 26. An electrode comprising a laminated member having a first thin conductive oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm and a second thin conductive oxide layer containing a second crystalline oxide of grain size of not larger than 20 nm, and a base member supporting said laminated member.
Specification