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Method for manufacturing semiconductor device with removable spacers

  • US 5,719,065 A
  • Filed: 09/28/1994
  • Issued: 02/17/1998
  • Est. Priority Date: 10/01/1993
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an active semiconductor layer including at least source, drain and channel regions on an insulating surface;

    forming an insulating film on said active semiconductor layer;

    forming a gate electrode on said insulating film;

    subjecting said gate electrode to anodization in an electrolyte in order to form an oxide of said gate electrode on at least a side surface thereof;

    etching at least a part of said insulating film using said oxide as a mask, thereby forming a gate insulating film;

    removing said oxide formed on the side surface of said gate electrode to expose a portion of said gate insulating film; and

    thenforming a film capable of trapping positive ions therein on said gate electrode and the exposed portion of said gate insulating film.

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