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Method for anisotropic etching conductive film

  • US 5,719,068 A
  • Filed: 11/22/1995
  • Issued: 02/17/1998
  • Est. Priority Date: 11/25/1994
  • Status: Expired due to Term
First Claim
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1. An anisotropic etching method comprising the steps of:

  • producing a molecular beam of halogen fluoride in a chamber; and

    irradiating the molecular beam of halogen fluoride in a substantially perpendicular direction to a substrate on which a conductive film is formed to give priority to etching of the conductive film in a vertical direction,wherein the molecular beam of the halogen fluoride is excited by RF.

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