Acceleration sensor

• US 5,719,333 A
• Filed: 01/20/1995
• Issued: 02/17/1998
• Est. Priority Date: 01/20/1994
• Status: Expired due to Term

• Current Assignee: Honda Giken Kogyo Kabushiki Kaisha (Honda Motor Company)
• Original Assignee: Honda Giken Kogyo Kabushiki Kaisha (Honda Motor Company)
• Inventors: Fueki, Nobuhiro, Inaba, Atsushi, Hiyama, Satoshi, Yamakawa, Hiroshi, Doi, Mizuho, Kuriyama, Nariaki, Nishio, Tomoyuki, Hosoi, Takashi, Shinotuka, Sukeyuju
• Primary Examiner(s): Oda, Christine K.
• Application Number:
  US08/376,155
• Time in Patent Office: 1,124 Days
• Field of Search: 73/204.22, 73/204.26, 73/497, 73/521, 73/514.05, 73/504.06, 73/504.05, 73/514.33, 338/34
• US Class Current: 73/514.05
• CPC Class Codes: G01P 15/008 by using thermal pick-up
• CPC Class Codes: G01P 15/12 by alteration of electrical resistance G01P15/0897, G01P15/105 take precedence
• CPC Class Codes: G01P 15/18 in two or more dimensions

Abstract

A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.

Claims

1. An acceleration sensor having a temperature-sensing resistor element and a stationary gas disposed in a closed space with temperature distribution in an equilibrium state, said acceleration sensor detecting temperature at an unbalanced state of said temperature distribution, said unbalanced state being caused in response to acceleration acting on a sensor case, with a change in resistance of said temperature-sensing resistor element, wherein:

said temperature-sensing resistor element and a heater are formed on a surface of said sensor case by using a photoengraving process in a semiconductor manufacturing process.

2. An acceleration sensor according to claim 1, wherein, said sensor case, a cavity, and a bridge are formed on at least one of a first semiconductor substrate and an insulating substrate by said photoengraving process, a heat-type temperature-sensing resistor element being integrally formed on said bridge by said photoengraving process and disposed in a closed space in which a gas is enclosed.

3. An acceleration sensor according to claim 2, wherein said sensor case is formed by joining at least one of a second semiconductor substrate and an insulating substrate, which has a cavity formed by said photoengraving process, to said first semiconductor substrate or insulating substrate, said closed space being formed by the cavities in said at least one first and second semiconductor substrate and insulating substrate, said gas being enclosed in said closed space.

4. An acceleration sensor according to any one of claims 2 to 3, wherein said heater is positioned at a center of said bridge, said bridge having a pair of temperature-sensing resistor elements opposing at a predetermined distance from said heater.

5. An acceleration sensor according to claims 2 or 3, wherein said bridge is formed with a pair of said heat-type temperature-sensing resistor elements opposing at a predetermined distance from the center.

15. An acceleration sensor according to any one of claim 1, 6, 9 or 14 wherein said gas is selected from the group consisting of:

nitrogen, argon.

16. An acceleration sensor according to any one of claim 1, 6, 9 or 14 wherein said gas is a pressurized inert gas.

6. An acceleration sensor having a temperature-sensing resistor element disposed in a closed space with temperature distribution in an equilibrium state, said acceleration sensor detecting temperature at an unbalanced state of said temperature distribution, said unbalanced state being caused in response to acceleration acting on the acceleration sensor, with a change in resistance of said temperature-sensing resistor element, said acceleration sensor comprising:

a sensor case for forming said closed space, a stationary gas enclosed in said sensor case, a heater for creating a temperature distribution in said closed space by heating said gas, said temperature-sensing resistor element for detecting a temperature change caused by movement of said gas with temperature distribution when acceleration acts on said sensor case.

7. An acceleration sensor according to claim 6, wherein said temperature-sensing resistor element is disposed at a predetermined distance from said heater in the direction of acceleration.

8. An acceleration sensor according to claim 6 or 7 further comprising a temperature-sensing resistor element for temperature compensation for detecting the ambient temperature, and an acceleration correction means for correcting an output signal from said temperature-sensing resistor element based on an output signal from said temperature-sensing resistor element for temperature compensation.

9. An acceleration sensor having temperature-sensing resistor elements disposed in a closed space with temperature distribution in an equilibrium state, said acceleration sensor detecting temperature at an unbalanced state of said temperature distribution, said unbalanced state being caused in response to acceleration acting on the acceleration sensor with a change in resistance of said temperature-sensing resistor elements, said acceleration sensor comprising:

a sensor case for forming said closed space, a stationary gas enclosed in said sensor case, a pair of heat-type temperature-sensing resistor elements provided in said sensor case for creating temperature distribution in said space by heating said gas and for detecting the temperature change caused by movement of said gas from the action of acceleration, and a pair of standard resistors for forming a bridge circuit together with said pair of heat-type temperature-sensing resistor elements.

10. An acceleration sensor according to claim 9, wherein said pair of heat-type temperature-sensing resistor elements are disposed at a predetermined distance from a heater in a direction of acceleration.

11. An acceleration sensor according to claim 9 or 10 further comprising a plurality of heaters disposed in a direction of acceleration and positioned on both sides of said pair of heat-type temperature-sensing resistor elements.

12. An acceleration sensor having temperature-sensing resistor elements disposed in a closed space with the temperature distribution in an equilibrium state, said acceleration sensor detecting temperature at an unbalanced state of said temperature distribution, which unbalanced state is caused in response to acceleration acting on a sensor case, with a change of resistance of said temperature-sensing resistor elements, said acceleration sensor comprising:

a sensor case for forming a closed space in which a gas is enclosed, a heater disposed in said closed space, for creating temperature distribution in said closed space by heating a gas, and a pair of temperature-sensing resistor elements opposing said heater and disposed in each of multiple axis directions, wherein said closed space said heater and said pair of temperature-sensing resistor elements disposed in each of multiple axis directions are formed on a plurality of separate semiconductor substrates, said plurality of semiconductor substrates joined together in one direction.

13. An acceleration sensor according to any one of claim 2, 3, 6, 9 or 12 wherein said gas being enclosed in said closed space is a pressurized gas with a low heat transfer coefficient.

14. An acceleration sensor comprising

a first semiconductor substrate having a cavity formed therein,

a second semiconductor substrate having an integral bridge extending over a cavity formed in said second semiconductor substrate,

a temperature-sensing resistor element formed on said bridge, said first and second semiconductor substrates joined together with said first semiconductor substrate cavity facing said second semiconductor substrate cavity for forming a closed spaced surrounding said bridge,

a stationary gas enclosed within said closed space.

17. An acceleration sensor according to claim 14, wherein a third semiconductor substrate is provided, said third semiconductor substrate having an integral bridge extending over a through hole formed in said semiconductor substrate, and a temperature-sensing resistor element formed on said bridge of said third semiconductor substrate, said third semiconductor substrate being positioned between and joined to said first and second semiconductor substrates with said through hole forming a portion of said closed space.

18. An acceleration sensor according to claim 17, wherein a fourth semiconductor substrate is provided, said fourth semiconductor substrate having an integral bridge extending over a through hole formed in said fourth semiconductor substrate, and a temperature-sensing resistor element formed on said bridge of said fourth semiconductor substrate, said fourth semiconductor substrate positioned between and joined to said second and third semiconductor substrates with said through hole of said fourth semiconductor substrate forming a portion of said closed space.

19. An acceleration sensor according to claim 18, wherein a heater is provided on said bridge of said fourth semiconductor substrate.

20. An acceleration sensor according to claim 19, wherein two pairs of temperature-sensing resistor elements are formed on said bridge of said fourth semiconductor substrate.

21. An acceleration sensor according to claim 20, wherein said two pairs of temperature-sensing resistor elements are positioned perpendicular to each other for separately sensing acceleration in perpendicular directions.

22. An acceleration sensor according to claim 21, wherein said heater is positioned between the temperature-sensing resistor elements of each said pair of temperature-sensing resistor elements.

23. An acceleration sensor according to claim 18, wherein said fourth semiconductor substrate is smaller than said second semiconductor substrate, said third semiconductor substrate is smaller than said fourth semiconductor substrate, and a first semiconductor substrate is smaller than said third semiconductor substrate for forming a pyramid-shaped sensor with a perimeter upper surface of each of said second, third and fourth semiconductor substrates exposed for making electrical connections to said temperature-sensing resistor elements.