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Process for forming a semiconductor device and a static-random-access memory cell

  • US 5,721,167 A
  • Filed: 02/10/1997
  • Issued: 02/24/1998
  • Est. Priority Date: 02/10/1997
  • Status: Expired due to Fees
First Claim
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1. A process for forming a semiconductor device comprising the steps of:

  • forming a first conductive layer over a substrate having a first region and a second region;

    forming a first dielectric layer over the first conductive layer;

    selectively etching the first dielectric layer to form a patterned first dielectric layer, wherein;

    a first portion of the first dielectric layer is removed over the first region of the substrate; and

    a second portion of the first dielectric layer remains over the second region of the first conductive layer;

    forming a second conductive layer over the patterned first dielectric layer and the first conductive layer; and

    selectively etching the first conductive layer, the first dielectric layer, and the second conductive layer to form a first gate electrode and a second gate electrode, wherein;

    the first gate electrode overlies the first region of the substrate and includes the first conductive layer and the second conductive layer; and

    the second gate electrode overlies the second region of the substrate and includes the first conductive layer, the second portion of the first dielectric layer, and the second conductive layer.

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