Tuneable microwave devices including fringe effect capacitor incorporating ferroelectric films

• US 5,721,194 A
• Filed: 06/07/1995
• Issued: 02/24/1998
• Est. Priority Date: 12/01/1992
• Status: Expired due to Fees

• Current Assignee: Robert M. Yandrofski, Y. Development, LLC
• Original Assignee: Superconducting Core Technologies, Inc., University of Colorado System
• Inventors: Scott, James Floyd, Barnes, Frank, Yandrofski, Robert M., Hermann, Allen M., Price, John Charles
• Primary Examiner(s): Lee, Benny T.
• Application Number:
  US08/480,164
• Time in Patent Office: 993 Days
• Field of Search: 333/24 C, 333/161, 333/99 S, 361/277, 361/281, 361/322, 361/321.1, 505/210, 505/700, 505/701, 505/866
• US Class Current: 505/210
• CPC Class Codes: H01G 7/06 having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors electrets H01G7/02
• CPC Class Codes: H01P 1/181 using ferroelectric devices
• CPC Class Codes: H01P 7/082 Microstripline resonators H01P7/088 takes precedence
• CPC Class Codes: H01P 7/084 Triplate line resonators H01P7/088 takes precedence
• CPC Class Codes: H01P 7/088 Tunable resonators
• CPC Class Codes: H01Q 1/364 using a particular conducting material, e.g. superconductor
• CPC Class Codes: H01Q 3/44 varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
• CPC Class Codes: Y10S 505/70 High TC, above 30 k, superconducting device, article, or structured stock
• CPC Class Codes: Y10S 505/701 Coated or thin film device, i.e. active or passive
• CPC Class Codes: Y10S 505/866 Wave transmission line, network, waveguide, or microwave storage device

Abstract

The present invention relates to a tuneable fringe effect capacitor for conducting radio frequency energy. The capacitor includes a thin film of ferroelectric material, a pair of films of a conductive material deposited on the ferroelectric film with a gap between the films, and a substrate for the ferroelectric material and the conductive films. The capacitance value across the gap is varied by applying a voltage to the ferroelectric material and thereby altering the dielectric constant of the ferroelectric material.

Claims

1. A tuneable fringe effect capacitor for conducting radio frequency energy comprising a thin film of ferroelectric material having a dielectric constant which is a function of a voltage applied thereto, a pair of conductive layers for conducting radio frequency energy separated by a gap, the thin film of ferroelectric material being disposed in the gap between the conductive layers to provide a first conductive path for the radio frequency energy, and an electrically insulating substrate supporting the conductive layers and the thin film of ferroelectric material, the conductive layers and substrate providing a second conductive path for the radio frequency energy, the gap between the pair of conductive layers ferroelectric capacitance across the film of ferroelectric material disposed in the first conductive path and a substrate capacitance across a portion of the substrate disposed in the second conductive path whereby, when radio frequency energy propagates through the tuneable fringe effect capacitor, a first portion of the radio frequency energy propagates along the first conductive path and a second portion of the radio frequency energy propagates along the second conductive path such that the substrate capacitance and the ferroelectric capacitance are electrically connected in parallel.

2. A tuneable fringe effect capacitor in accordance with claim 1, and further comprising means for applying the voltage across the pair of conductive layers and thereby through the ferroelectric film in the gap between the conductive layers to affect the dielectric constant of the ferroelectric film and thereby a capacitance value associated with the capacitor.

3. A tuneable fringe effect capacitor in accordance with claim 1 wherein the voltage is a variable dc voltage and further comprising means for applying the variable dc voltage across the conductive layers and thereby through the ferroelectric film in the gap between the conductive layers to vary the dielectric constant of the ferroelectric film and thereby a capacitance value associated with the capacitor.

4. A tuneable fringe effect capacitor in accordance with claim 1 in which the gap is defined by a plurality of projections extending respectively from each of the pair of conductive layers and nested with respect to one another, with the film of ferroelectric material in the gap delineated by the nested projections located between the pair of layers of conductive material.

5. A tuneable fringe effect capacitor in accordance with claim 4 and further comprising means for applying the voltage across the pair of conductive layers and thereby through the ferroelectric film in the gap between the pair of conductive layers to affect the dielectric constant of the ferroelectric film and thereby a capacitance value associated with the capacitor.

6. A tuneable fringe effect capacitor in accordance with claim 4 wherein a surface of the ferroelectric film is contiguous with a surface of the substrate.

7. A tuneable fringe effect capacitor in accordance with claim 4 in which the thin film of ferroelectric material having a dielectric constant which is a function of the voltage applied thereto has a portion thereof extending into the gap between the pair of layers of conductive material.

8. A tuneable conducting fringe effect capacitor in accordance with claim 1 wherein the capacitor has a capacitance value of approximately 1 pf.

9. A tuneable fringe effect capacitor in accordance with claim 1 wherein the dielectric constant of the thin film ferroelectric material is a function of the voltage applied thereto and the radio frequency energy is one of microwave and millimeter wave energy.

10. A tuneable fringe effect capacitor in accordance with claim 1 wherein the thin film of ferroelectric material has a thickness and the thickness ranges from 100 to 10,000 angstroms.

11. A tuneable fringe effect capacitor in accordance with claim 1 wherein said conductive material is a superconductive material.

13. A tuneable fringe effect capacitor in accordance with claim 1 wherein the gap is defined by a plurality of projections extending respectively from the pair of conductive films and nested with respect to one another, with the thin film ferroelectric material in the gap delineated by the nested projections located between the films of conductive material.

14. A tuneable fringe effect capacitor in accordance with claim 13 wherein a surface of the thin film ferroelectric material is disposed opposite to and is contiguous with the common surface of the substrate and the pair of conductive films is adjacent to the surface of the thin film ferroelectric material.

16. A tuneable fringe effect capacitor in accordance with claim 1 wherein said substrate is an electrically insulating material.

12. A tuneable fringe effect capacitor for transmitting radio frequency energy comprising a thin film ferroelectric material having a dielectric constant that is a function of a voltage applied thereto, a pair of conductive films in contact with the ferroelectric material with a gap between the conductive films, the thin film ferroelectric material being disposed in the gap between the conductive films to provide a first conductive path for the radio frequency energy, and a substrate supporting the thin film ferroelectric material and said pair of conductive films, the conductive films and substrate providing a second conductive path for the radio frequency energy, the gap between the pair of conductive films providing a ferroelectric capacitance across the thin film ferroelectric material disposed in the first conductive path and a substrate capacitance across a portion of the substrate disposed in the second conductive path, wherein the pair of conductive films are adjacent to a common surface of the substrate and, when radio frequency energy propagates through the tuneable fringe effect capacitor, a first portion of the radio frequency energy propagates along the first conductive path and a second portion of the radio frequency energy propagates along the second conductive path such that the substrate produces the substrate capacitance in response to the radio frequency energy and the ferroelectric material produces the ferroelectric capacitance in response to the radio frequency energy and the substrate capacitance and ferroelectric capacitance are electrically connected in parallel.

15. A tuneable fringe effect capacitor accordance with claim 12 wherein the pair of conductive films are located on a common surface of the thin film ferroelectric material.

17. A tuneable fringe effect capacitor in accordance with claim 12 wherein the dielectric constant of the thin film ferroelectric material is a function of the voltage applied thereto and the frequency of the radio frequency energy has a value that is at least that of the frequency of microwave energy.

18. A tuneable fringe effect capacitor in accordance with claim 17 wherein the thin film ferroelectric material has a thickness ranging from 100 to 10,000 angstroms.

19. A tuneable fringe effect capacitor in accordance with claim 12 wherein the thin film ferroelectric material and the pair of conductive films are located on the common surface of the substrate.

20. A tuneable fringe effect capacitor for transmitting radio frequency energy comprising a thin film of a dielectric material having a dielectric constant which is a function of a voltage applied thereto, variable voltage means for applying a variable voltage to the thin film dielectric material, a pair of coplanar conductive films with a gap therebetween, and an electrically insulating substrate supporting the thin film of dielectric material and the pair of coplanar conductive films wherein the thin film of dielectric material is disposed in the gap between the conductive films to provide a first conductive path for the radio frequency energy and the conductive films and a portion of the substrate disposed in the gap provide a second conductive path for the radio frequency energy, the gap being free of a conductive material above the electrically insulating substrate and below the thin film of dielectric material and providing a dielectric capacitance across the film of dielectric material disposed in the first conductive path and a substrate capacitance across the portion of the substrate disposed in the second conductive path, the conductive films and thin film dielectric material being located on a common surface of the substrate whereby, when radio energy propagates through the tuneable fringe effect capacitor, a first portion of the radio frequency energy propagates along the first conductive path and a second portion of the radio frequency energy propagates along the second conductive path such that the substrate capacitance and the dielectric capacitance are electrically connected in parallel and wherein, the radio frequency energy has a frequency that has a value that is at least that of the frequency of microwave energy.

21. A tuneable fringe effect capacitor in accordance with claim 20, wherein the substrate has a substrate dielectric constant and the substrate dielectric constant is independent of a voltage applied to the substrate.

22. A tuneable fringe effect capacitor in accordance with claim 21, wherein the substrate dielectric constant is less than the dielectric constant of the thin film dielectric material.

23. A tuneable fringe effect capacitor in accordance with claim 26, wherein the thin film dielectric material is a thin film ferroelectric material.