Semiconductor device having a thermal resistance detector in the heat radiating path

• US 5,721,455 A
• Filed: 11/20/1996
• Issued: 02/24/1998
• Est. Priority Date: 11/21/1995
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takashita, Masakatsu
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US08/752,548
• Time in Patent Office: 461 Days
• Field of Search: 257/712, 257/706, 257/707, 257/711, 257/713, 257/717, 257/720, 257/723, 257/724, 257/693, 257/674, 257/675, 257/676, 257/48, 257/80-84, 257/116-118, 257/177 , 257/178, 257/222, 257/225-229, 257/238, 257/293, 257/725
• US Class Current: 257/713
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]

Abstract

In a semiconductor device comprising a semiconductor chip on which semiconductor elements are formed, the semiconductor device further comprises a thermal resistance detector for detecting an increase of thermal resistance of a heat radiating path which is provided to radiate the heat generated in the semiconductor device during operation, and a thermal resistance detection result output circuit for outputting a result of a detection by the thermal resistance detector to an output of the semiconductor device. The semiconductor device can detect at the early stage the increase of the thermal resistance of the heat radiating path, and the deterioration of the semiconductor device due to the crack in the solder layer bonding the chip mounting insulation substrate and heat sink during the operation of the device.

Claims

1. A semiconductor device comprising:

a semiconductor chip;

a heat sink;

an insulation substrate having high thermal conductivity and being provided between the semiconductor chip and the heat sink so as to hold the semiconductor chip;

a solder layer for bonding the insulation substrate to the heat sink;

thermal resistance detection means for detecting an increase of thermal resistance of a heat radiating path including the insulation substrate, the solder and the heat sink, the thermal resistance detection means being provided on a peripheral portion of the insulation substrate and being electrically insulated from the semiconductor chip; and

thermal resistance detection result output means for outputting a result of a detection by the thermal resistance detection means externally of the semiconductor device.

2. A semiconductor device according to claim 1, wherein the thermal resistance detection means determine on the basis of temperature detection output of one or a plurality of temperature detection element/elements arranged at least on a periphery of the insulation substrate that the thermal resistance in the heat radiating path is higher than a reference value.

3. A semiconductor device according to claim 1, wherein the thermal resistance detection means determine that the thermal resistance in the heat radiating path is higher than a reference value on the basis of an electric characteristics output depending on a thermal resistance of one or a plurality of temperature detection element/elements arranged at least on a periphery of the insulation substrate.

4. A semiconductor device according to claim 1, wherein the thermal resistance detection means determine that the thermal resistance in the heat radiating path is higher than a reference value by use of temperature detection element/elements arranged on a periphery of the semiconductor chip.

5. A semiconductor device comprising:

a semiconductor chip;

an insulation substrate having an element mounting surface on which a metal pattern is formed, and a back surface on which a metal layer is formed;

a first solder layer for bonding the insulation substrate to the semiconductor chip in a state where the semiconductor chip is mounted on the metal pattern for mounting the chip;

bonding wires provided between the metal pattern on the insulation substrate for mounting the semiconductor chip and a pad section of the semiconductor chip;

a heat sink;

a second solder layer for bonding the metal on the back surface of the insulation substrate to the heat sink in a state where the metal on the back surface of the insulation substrate contacts on the heat sink;

thermal resistance detection means for detecting an increase of thermal resistance of a heat radiating path including the insulation substrate, the first solder, the second solder and the heat sink, the thermal resistance detection means being provided on a peripheral portion of the insulation substrate and being electrically insulated from the semiconductor chip; and

thermal resistance detection result output means for outputting a result of a detection by the thermal resistance detection means externally of the semiconductor device.