Optical proximity correction method and apparatus
First Claim
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1. An optical proximity correction method for preparing reticle designs to be used in photolithography, the method comprising the following steps:
- (a) performing pattern recognition on an integrated circuit layout design to identify a location of a selected feature edge in the layout design;
(b) obtaining an optical proximity correction value for said selected feature edge by evaluating one or more non-linear mathematical expressions for optical proximity correction at the location of the selected feature edge, the one or more non-linear mathematical expression defining a curve that non-linearly increases an amount of optical proximity correction for said selected feature edge; and
(c) incorporating said optical proximity correction value into said layout design to form said reticle design.
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Abstract
A photolithography optical proximity correction method for mask layouts (e.g., reticle masks) is disclosed. The method includes performing pattern recognition on a layout design to identify locations of feature edges with respect to other feature edges in the layout design. The method further includes obtaining an optical proximity correction for at least one of the feature edges by evaluating one or more non-linear mathematical expressions for optical proximity correction at the location of that edge with respect to other feature edges.
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Citations
17 Claims
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1. An optical proximity correction method for preparing reticle designs to be used in photolithography, the method comprising the following steps:
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(a) performing pattern recognition on an integrated circuit layout design to identify a location of a selected feature edge in the layout design; (b) obtaining an optical proximity correction value for said selected feature edge by evaluating one or more non-linear mathematical expressions for optical proximity correction at the location of the selected feature edge, the one or more non-linear mathematical expression defining a curve that non-linearly increases an amount of optical proximity correction for said selected feature edge; and (c) incorporating said optical proximity correction value into said layout design to form said reticle design. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An apparatus for performing optical proximity correction on layout designs to be used in photolithography, the apparatus comprising:
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(a) means for performing pattern recognition on an integrated circuit layout design to identify locations of selected feature edges in the layout design; and (b) means for obtaining an optical proximity correction value for at least one of said selected feature edges by evaluating one or more non-linear mathematical expressions for optical proximity correction at the location of said at least one selected feature edge, the one or more non-linear mathematical expression defining a curve that non-linearly increases an amount of optical proximity correction for said at least one of said selected feature edges. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A reticle design for use in photolithography, the reticle design having a pattern of light transmitting and light blocking regions specified at least in part by a non-linear proximity correction method comprising the following steps:
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(a) performing pattern recognition on an integrated circuit layout design to identify a location of a selected feature edge in the layout design; (b) obtaining an optical proximity correction value for said selected feature edge by evaluating one or more non-linear mathematical expressions for optical proximity correction at the location of the selected feature edge, the one or more non-linear mathematical expression defining a curve that non-linearly increases an amount of optical proximity correction for the selected feature edge; and (c) incorporating said optical proximity correction value into said layout design to form said reticle design. - View Dependent Claims (15, 16, 17)
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Specification