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Process for manufacturing a semiconductor device including a silicidation step

  • US 5,723,377 A
  • Filed: 06/11/1996
  • Issued: 03/03/1998
  • Est. Priority Date: 06/13/1995
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a first insulating film on a semiconductor substrate;

    forming a first conductive film on said first film;

    forming a first silicide film on said first conductive film;

    forming a second insulating film on said first silicide film;

    forming a gate electrode by etching said first conductive film, first silicide film, and second insulating film;

    forming source and drain regions by using said gate electrode as an implant mask;

    forming a second conductive film on said gate electrode and said source and drain regions;

    forming a second silicide film on said source and drain region by heating said second conductive film; and

    removing said second conductive film and said second insulating film by using an etchant.

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