Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film

• US 5,723,384 A
• Filed: 09/13/1996
• Issued: 03/03/1998
• Est. Priority Date: 11/03/1995
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ko, Dae-hong, Park, Byung-lyul, Lee, Sang-in, Ha, Jung-min
• Primary Examiner(s): LORING, SUSAN
• Application Number:
  US08/713,944
• Time in Patent Office: 536 Days
• Field of Search: 438/756, 438/757, 438/789, 438/689, 438/381, 438/384, 438/387
• US Class Current: 438/756
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10B 12/318 the storage electrode having multiple segments

Abstract

There is provided a method for manufacturing a capacitor in a semiconductor device including the steps of forming first and second insulating layers with a first contact hole through to a semiconductor substrate, patterning a first conductive layer to form a pedestal portion of a lower electrode, using a patterned third insulating layer selectively forming an upper portion of the lower electrode from a tungsten nitride thin film, and forming an undercut beneath the pedestal portion by wet-etching the second insulating layer.

Claims

1. A method of manufacturing a capacitor in a semiconductor device, comprising the steps of;

sequentially forming a first insulating layer and a second insulating layer over a semiconductor substrate;

patterning the first insulating layer and the second insulating layer to form a first contact hole exposing a portion of the semiconductor substrate;

forming a first conductive layer over the second insulating layer to fill the first contact hole and electrically contact the exposed portion of the semiconductor substrate;

patterning the first conductive layer to form a lower portion of a first capacitor electrode;

forming a third insulating layer over the lower portion of the first capacitor electrode;

patterning the third insulating layer to form a second contact hole exposing a portion of the lower portion of the first capacitor electrode, the second contact hole being surrounded by residual portions of the third insulating layer;

forming an upper portion of the first capacitor electrode on the exposed portion of the lower portion of the first capacitor electrode by selectively forming a second conductive layer pattern on bottom and side wall surfaces of the second contact hole;

removing the residual portions of the third insulating layer;

removing the second insulating layer to form an undercut beneath the lower portion of the first capacitor electrode;

forming a dielectric film over the first capacitor electrode; and

,

forming a second electrode over the dielectric film.

2. The method of claim 1, wherein the step of removing the second insulating layer to form an undercut beneath the lower portion of the first capacitor electrode comprises a wet-etching process step.

3. The method of claim 1, wherein the step of removing the second insulating layer to form an undercut beneath the lower portion of the first capacitor electrode comprises a dry-etching process step.

4. The method of claim 1, wherein the first insulating layer is formed of silicon oxide, and the second insulating layer is formed of silicon nitride.

5. The method of claim 1, wherein the first conductive layer pattern is formed of polysilicon, and the second conductive layer pattern is formed from a tungsten nitride thin film.

6. The method of claim 5, wherein the step of forming an upper portion of the first capacitor electrode on the exposed portion of the lower portion of the first capacitor electrode by selectively forming the tungsten nitride thin film on the bottom and side wall surfaces of the second contact hole comprises the step of:

forming by chemical vapor deposition the tungsten nitride thin film relying on a reaction between a deposition gas containing tungsten, a chemical reaction agent, and an inorganic compound.

7. The method of claim 5, wherein the step of forming an upper portion of the first capacitor electrode on the exposed portion of the lower portion of the first capacitor electrode by selectively forming the tungsten nitride thin film on the bottom and side wall surfaces of the second contact hole comprises the step of:

forming by chemical vapor deposition the tungsten nitride thin film relying on a reaction between a deposition gas containing tungsten, a chemical reaction agent, and an organic compound.

12. The method claim 6, wherein the chemical reaction agent is one selected from a group consisting of H₂, SiH₄, SiHlCl₃, SiH₂ Cl₂, and B₂ H₆.

13. The method claim 7, wherein the chemical reaction agent is one selected from a group consisting of H₂, SiH₄, SiHlCl₃, SiH₂ Cl₂, and B₂ H₆.

14. The method of claim 1, wherein the dielectric film is formed of one selected from a group consisting of Ta₂ O₅, BaSrTiO₃, and SrTiO₃.

8. The method of 6, wherein the deposition gas is one selected from a group consisting of WF₆ and WCl₆.

10. The method of claim 8, wherein the inorganic compound is one selected from a group consisting of gaseous N₂ and NH₃.

9. The method of 7, wherein the deposition gas is one selected from a group consisting of WF₆ and WCl₆.

11. The method of claim 9, wherein the organic compound is methyl-hydrizine.

15. A method for manufacturing a capacitor, comprising the steps of:

forming a first insulating layer over a semiconductor substrate;

patterning the first insulating layer to form a first contact hole exposing a portion of the semiconductor substrate;

forming a first conductive layer over the first insulating layer to fill the first contact hole;

forming a second insulating layer over the first conductive layer;

patterning the second insulating layer to form a second contact hole exposing a portion of the first conductive layer, the second contact hole being surrounded by residual portions of the second insulating layer;

selectively forming a second conductive layer pattern on bottom and side wall surfaces of the second contact hole;

removing the residual portions of the second insulating layer;

forming an undercut beneath the second conductive layer pattern by wet-etching the first conductive layer using the second conductive layer pattern as a mask, the combination of the second conductive layer pattern and wet-etched first conductive layer forming a first capacitor electrode;

forming a dielectric film over the first capacitor electrode; and

,

forming a second capacitor electrode on the dielectric film.

16. The method of claim 15, wherein the second conductive layer pattern is formed of a tungsten nitride thin film.

17. The method of claim 16, wherein the step of selectively forming the tungsten nitride thin film on bottom and side wall surfaces of the second contact hole comprises the step of:

forming by chemical vapor deposition the tungsten nitride thin film relying on a reaction between a deposition gas containing tungsten, a chemical reaction agent, and an inorganic compound.

18. The method of claim 16, wherein the step of selectively forming the tungsten nitride thin film on bottom and side wall surfaces of the second contact hole comprises the step of:

forming by chemical vapor deposition the tungsten nitride thin film relying on a reaction between a deposition gas containing tungsten, a chemical reaction agent, and an organic compound.