Monocrystalline accelerometer and angular rate sensor and methods for making and using same
First Claim
1. A semiconductor device formed from a monocrystalline semiconductor substrate having a substantially planar main surface, for measuring force components, said semiconductor device comprising:
- at least one cantilever beam formed in said monocrystalline semiconductor substrate, said at least one cantilever beam having a surface inclined non-parallel, non-perpendicular to the main substrate plane of said monocrystalline semiconductor substrate wherein inclination of the at least one cantilever beam to the main surface of said monocrystalline semiconductor substrate is achieved through etching of the monocrystalline semiconductor substrate and said surface of said at least one cantilever beam being defined by one crystal plane of said monocrystalline semiconductor substrate inclined non-parallel, non-perpendicular with respect to the main surface of said monocrystalline semiconductor substrate and that bending of each of the at least one cantilever beams occurs substantially along an axis perpendicular to said inclined surface; and
at least one mass of inertia, coupled to a corresponding one of said at least one cantilever beam.
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Abstract
A semiconductor device for measuring force components, acceleration, and/or angular rate, formed from a single crystal (monocrystalline semiconductor substrate) comprises at least one cantilever beam inclined to the main surface of the monocrystalline material of the monocrystalline semiconductor substrate. At least one interial mass may be coupled to a corresponding at least one cantilever beam and be integrally formed from the monocrystalline semiconductor substrate. The angle of the cantilever beam to the main surface of the monocrystalline material of the monocrystalline semiconductor substrate is achieved through etching of the monocrystalline semiconductor substrate and is defined by the inclination of crystal planes constituting the beam. The bending of the inclined cantilever beam principally occurs in a direction toward the beam.
117 Citations
5 Claims
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1. A semiconductor device formed from a monocrystalline semiconductor substrate having a substantially planar main surface, for measuring force components, said semiconductor device comprising:
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at least one cantilever beam formed in said monocrystalline semiconductor substrate, said at least one cantilever beam having a surface inclined non-parallel, non-perpendicular to the main substrate plane of said monocrystalline semiconductor substrate wherein inclination of the at least one cantilever beam to the main surface of said monocrystalline semiconductor substrate is achieved through etching of the monocrystalline semiconductor substrate and said surface of said at least one cantilever beam being defined by one crystal plane of said monocrystalline semiconductor substrate inclined non-parallel, non-perpendicular with respect to the main surface of said monocrystalline semiconductor substrate and that bending of each of the at least one cantilever beams occurs substantially along an axis perpendicular to said inclined surface; and at least one mass of inertia, coupled to a corresponding one of said at least one cantilever beam. - View Dependent Claims (2, 3, 4, 5)
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Specification