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Semiconductor device including a ferroelectric film and control method thereof

  • US 5,723,885 A
  • Filed: 03/13/1996
  • Issued: 03/03/1998
  • Est. Priority Date: 06/08/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor device with a memory cell, said memory cell comprising:

  • a first semiconductor region of a first conductivity type forming a channel region;

    second semiconductor regions of a second conductivity type forming a pair of source/drain regions formed at both ends of said first semiconductor region;

    a gate dielectric film formed on one main surface of said first semiconductor region and having a ferroelectric film;

    a gate electrode formed on said ferroelectric film; and

    a back electrode formed on another main surface of said first semiconductor region at a position corresponding to said gate electrode with an insulating film interposed therebetween.

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