Voltage bias and temperature compensation circuit for radio frequency power amplifier

• US 5,724,004 A
• Filed: 06/13/1996
• Issued: 03/03/1998
• Est. Priority Date: 06/13/1996
• Status: Expired due to Term

• Current Assignee: Google Technology Holdings LLC (Alphabet Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Beckwith, William, Reif, Warren P.
• Primary Examiner(s): MOTTOLA, STEVEN J
• Application Number:
  US08/662,551
• Time in Patent Office: 628 Days
• Field of Search: 327/537, 327/541, 327/543, 330/277, 330/285, 330/289, 330/296
• US Class Current: 330/277
• CPC Class Codes: H03F 1/306 in junction-FET amplifiers H03F1/303, H03F1/305, H03F1/309 take precedence
• CPC Class Codes: H03F 3/1935 with junction-FET devices

Abstract

A communication device (104) includes a radio frequency power amplifier (202) and a bias circuit (204). The power amplifier (202) includes a depletion mode MESFET (214) for RF power amplification. To properly bias the MESFET (214) in a circuit including logic components powered by a conventional battery (136), the bias circuit (204) includes a level shifter (223) to provide the necessary gate-to-source voltage for the MESFET (214). To maintain the RF output power from the communication device (104) constant over temperature, the bias circuit (204) output voltage varies over temperature to track the temperature variation of the MESFET (214).

Claims

1. A radio frequency (RF) power amplifier, comprising:

a radio frequency gain stage for providing an amplified RF signal to an antenna at an RF antenna power output level, the radio frequency gain stage including a depletion mode MESFET (metal epitaxial semiconductor field effect transistor) configured for amplifying an RF signal to provide the amplified RF signal, the depletion mode MESFET being characterized by a MESFET temperature coefficient; and

a bias circuit having a control input for receiving a variable control signal and an output coupled to the radio frequency gain stage, the bias circuit providing an output voltage to the radio frequency gain stage in response to the variable control signal, the output voltage having an output voltage temperature coefficient, the output voltage temperature coefficient substantially compensating the MESFET temperature coefficient to maintain the RF antenna power output level substantially constant.

2. A radio frequency power amplifier as recited in claim 1 wherein the bias circuit includes a voltage divider for producing the output voltage in response to the variable control signal, the voltage divider being adjustable to provide one of a positive output voltage temperature coefficient and a negative output voltage temperature coefficient for compensating the MESFET temperature coefficient.

3. A radio frequency power amplifier as recited in claim 2 wherein the voltage divider is adjustable to provide a range of positive output voltage temperature coefficients and to provide a range of negative output voltage temperature coefficients.

4. A radio frequency (RF) power amplifier, comprising:

a radio frequency gain stage for providing an amplified RF signal to an antenna at an RF antenna power output level, the radio frequency gain stage including a depletion mode MESFET (metal epitaxial semiconductor field effect transistor) configured for amplifying an RF signal to provide the amplified RF signal and characterized by a MESFET temperature coefficient; and

a bias circuit having a control input for receiving a variable control signal and an output coupled to the radio frequency gain stage, the bias circuit providing an output voltage to the radio frequency gain stage in response to the variable control signal, the output voltage having an output voltage temperature coefficient sufficient to maintain the RF antenna power output level substantially constant;

wherein the output voltage temperature coefficient substantially compensates the MESFET temperature coefficient and wherein the depletion mode MESFET requires biasing by a negative gate-to-source voltage and the variable control signal comprises a positive voltage, and wherein the bias circuit includes a level shifter for receiving the positive voltage and producing the output voltage suitable for biasing the depletion mode MESFET.

5. A communication device, comprising:

an antenna;

a radio frequency (RF) power amplifier coupled to the antenna for providing amplified RF signals to the antenna at an RF antenna power output level, the RF power amplifier having a temperature variation;

a bias circuit coupled to the RF power amplifier, the bias circuit having a control input for receiving a positive control voltage and an output coupled to the RF power amplifier, the bias circuit producing a negative output voltage in response to the positive control voltage, the negative output voltage being temperature compensated to substantially cancel the temperature variation of the RF power amplifier for maintaining the RF antenna power output level at a substantially constant value; and

a controller coupled to the bias circuit for providing the positive control voltage to the bias circuit for controlling the RF antenna power output level.

6. A communication device as recited in claim 5 wherein the bias circuit includes a voltage divider for establishing a voltage divider ratio, the voltage divider ratio being variable for temperature compensating the negative output voltage.

7. A communication device as recited in claim 6 wherein the RF power amplifier includes a depletion mode MESFET (metal epitaxial semiconductor field effect transistor) for producing the amplified RF signals, the depletion mode MESFET having a negative temperature coefficient, the voltage divider establishing the voltage divider ratio to provide a negative output voltage temperature coefficient which temperature compensates the negative temperature coefficient.