Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method

• US 5,724,145 A
• Filed: 07/12/1996
• Issued: 03/03/1998
• Est. Priority Date: 07/17/1995
• Status: Expired due to Term

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki, Mori, Katsumi, Kaneko, Takeo
• Primary Examiner(s): Evans, F. L.
• Application Number:
  US08/679,714
• Time in Patent Office: 599 Days
• Field of Search: 356/381, 356/382, 250/559.27, 250/559.28
• US Class Current: 356/632
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/0042 On wafer testing, e.g. lasers are tested before separating wafer into chips
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18369 based on dielectric materials

Abstract

An optical film thickness measurement method and film formation method uses a method of measuring the optical thickness of films by radiating a monitor light beam towards a substrate during the formation of a stack of films on the substrate and measuring the optical film thickness from extreme values in the resultant reflection intensity. This stack of films comprises a first film having a reflectance of at least 98% within a predetermined wavelength range and a second film formed on the first film and having an absorption coefficient of 1000 cm^-1 or less within that predetermined wavelength range. The first film is measured by a first monitor light beam having a predetermined wavelength and the second film is measured by a second monitor light beam having a wavelength that differs from the predetermined wavelength range.

Claims

1. An optical film thickness measurement method in which a monitor light beam is radiated towards a substrate during the formation of a stack of films on said substrate, and optical film thickness is measured from extreme values of the reflection intensity of light reflected therefrom,

wherein said stack of films, comprises:

a first film having a reflectance of at least 98% within a predetermined wavelength range; and

a second film formed on said first film and having an absorption coefficient of 1000 cm^-1 or less within said predetermined wavelength range;

said optical film thickness measurement method comprises the steps of;

measuring said first film by a first monitor light beam having a predetermined wavelength dependent on the predetermined wavelength range; and

measuring said second film by a second monitor light beam having a wavelength that differs from said predetermined wavelength range.

2. The optical film thickness measurement method as defined in claim 1, wherein said second monitor light beam has a wavelength shorter than said predetermined wavelength range.

3. The optical film thickness measurement method as defined in claim 1, wherein said first monitor light beam has a wavelength comprised within said predetermined wavelength range.

4. The optical film thickness measurement method as defined in claim 2, wherein said first monitor light beam has a wavelength comprised within said predetermined wavelength range.

5. A film formation method for forming a stack of films on a substrate;

wherein said stack of films, comprises;

a first film having a reflectance of at least 98% within a predetermined wavelength range; and

a second film formed on said first film and having an absorption coefficient of 1000 cm^-1 or less within said predetermined wavelength range;

said first film is formed while a first monitor light beam having a predetermined wavelength dependent on the predetermined wavelength range is radiated towards said substrate and the optical film thickness thereof is monitored from extreme values of the reflection intensity of light reflected therefrom; and

said second film is formed while a second monitor light beam having a wavelength different from those in said predetermined wavelength range is radiated towards said substrate and the optical film thickness thereof is monitored from extreme values of the reflection intensity of light reflected therefrom.

6. The film formation method as defined in claim 5, wherein said second monitor light beam has a wavelength shorter than said predetermined wavelength range.

7. The film formation method as defined in claim 5, wherein said first monitor light beam has a wavelength comprised within said predetermined wavelength range.

8. The film formation method as defined in claim 6, wherein said first monitor light beam has a wavelength comprised within said predetermined wavelength range.

9. A method of fabricating a semiconductor laser, wherein a stack of semiconductor layers are formed on the substrate of a first conductive type by epitaxial growth, and wherein said stack of semiconductor layers comprises at least a distributed-Bragg reflection type of multilayer film mirror (DBR mirror) of a first conductive type, a first clad layer of the first conductive type, an active layer, a second clad layer of a second conductive type, and a contact layer of the second conductive type;

wherein the thickness of said DBR mirror is measured by radiating a first monitor light beam having a predetermined wavelength towards said substrate during the film formation process and switching from the formation of one semiconductor layer to the formation of another semiconductor layer of a different refractive index when extreme value of the reflection intensity of light reflected therefrom is obtained, so that semiconductor layers having respectively high and low refractive index are formed alternately in a stack, and said DBR mirror has a reflectance of at least 98% in a predetermined wavelength range; and

said first clad layer is formed while the optical film thickness thereof is controlled by radiating a second monitor light beam having a wavelength different from those in said predetermined wavelength range towards said substrate, and monitoring extreme values of the reflection intensity of light reflected therefrom.

10. The method of fabricating a semiconductor laser as defined in claim 9, wherein said distributed-Bragg reflection type of multilayer film mirror has a reflectance of at least 99% within said predetermined wavelength range.

11. The method of fabricating a semiconductor laser as defined in claim 9, wherein said first clad layer has an absorption coefficient of 1000 cm^-1 or less.

12. The method of fabricating a semiconductor laser as defined in claim 9, wherein said first clad layer has an absorption coefficient of 100 cm^-1 or less.

13. The method of fabricating a semiconductor laser as defined in claim 9, wherein said second monitor light beam has a wavelength shorter than said predetermined wavelength range.

14. The method of fabricating a semiconductor laser as defined in claim 9, wherein said first monitor light beam has the same wavelength as the design lasing wavelength of said semiconductor laser.

15. The method of fabricating a semiconductor laser as defined in claim 13, wherein said first monitor light beam has the same wavelength as the design lasing wavelength of said semiconductor laser.

16. The method of fabricating a semiconductor laser as defined in claim 9, wherein said active layer, said second clad layer, and said contact layer are formed while the optical film thicknesses thereof are controlled by measuring with said first monitor light beam.