Electrostatic protection circuit comprising plurality of protective elements

• US 5,724,219 A
• Filed: 05/30/1996
• Issued: 03/03/1998
• Est. Priority Date: 05/30/1995
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Narita, Kaoru
• Primary Examiner(s): Fleming, Fritz
• Assistant Examiner(s): SHERRY, MICHAEL JUDE
• Application Number:
  US08/655,188
• Time in Patent Office: 642 Days
• Field of Search: 361/56, 361/58, 361/111, 361/91
• US Class Current: 361/111
• CPC Class Codes: H01L 27/0251 for MOS devices

Abstract

A semiconductor device according to this invention comprises a first power supply (Vcc) wiring, a second power supply (Gnd) wiring, a first, a second and a third protective elements (3-1, 3-2 and 3-3), a first connecting wiring which connects in common one ends of the first, the second and the third protective elements, a second connecting wiring which connects the other ends of the first, the second and the third protective elements, and a third connecting wiring which connects the first connecting wiring and the first power supply wiring. The third connecting wiring has a resistance which is higher than that of the first connecting wiring.

Claims

1. A semiconductor device comprising, a first power supply wiring, a second power supply wiring, a first, a second and a third protective elements arranged in parallel, a first connecting wiring connecting in common one ends of said first, said second and said third protective elements, a second connecting wiring connecting the other ends of said first, said second and said third protective elements to said second power supply wiring, and a third connecting wiring connecting said first connecting wiring to said first power supply wiring, where said third connecting wiring has a resistance higher than that of said first connecting wiring.

2. A semiconductor device as claimed in claim 1 wherein said first power supply wiring, said second power supply wiring, said first connecting wiring and said second connecting wiring are aluminum wirings, and said third connecting wiring is a wiring at least a part thereof is formed of a wiring material having a resistance higher than aluminum.

3. A semiconductor device as claimed in claim 1, wherein said first power supply wiring, said second power supply wiring, said first connecting wiring, said second connecting wiring and said third connecting wiring are wirings formed of an identical material, and the wiring length of said third connecting wiring is longer than the wiring length of said first connecting wiring.