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Process for micromechanical fabrication

  • US 5,725,729 A
  • Filed: 08/15/1996
  • Issued: 03/10/1998
  • Est. Priority Date: 09/26/1994
  • Status: Expired due to Term
First Claim
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1. A process for fabricating a micromachined structure, said process comprising the steps of:

  • selecting a starting wafer having a first single crystal silicon substrate with at least one dielectric surface and a second single crystal silicon substrate bonded to said at least one dielectric surface of said first silicon substrate;

    masking, patterning and diffusing said second single crystal silicon substrate with a first impurity in selected regions forming at least one of an electrode region and an anchor region;

    depositing a first sacrificial layer of single crystal silicon over said at least one of said electrode region and said anchor region, forming a gap spacer;

    depositing a first device layer of single crystal silicon over said gap spacer, said first device layer being doped in selected areas with an impurity to impart etch resistance to form a first device layer that has etch resistant areas;

    masking and patterning said first device layer forming a suitable geometry for said micromachined structure; and

    etching away said first sacrificial layer of single crystal silicon leaving said micromachined structure while preserving said dielectric surface.

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