Method for manufacturing an infrared sensor array

• US 5,726,066 A
• Filed: 02/13/1996
• Issued: 03/10/1998
• Est. Priority Date: 03/10/1994
• Status: Expired due to Fees

• Current Assignee: LG Electronics, Inc. (LG Corporation)
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Choi, Jun Rim
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US08/600,548
• Time in Patent Office: 756 Days
• Field of Search: 437/3, 437/4, 437/5, 437/901, 437/921, 437/228 H, 437/228 O, 437/228 SEN
• US Class Current: 438/66
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 148/08 Infrared

Abstract

An infrared sensor array and manufacturing method thereof is disclosed including a substrate; a supporter having a space portion for adiabatic structure between the substrate and supporter; and a plurality of infrared sensors arranged with a predetermined distance each other on the supporter above the space portion.

Claims

1. A method for manufacturing an infrared sensor array comprising the steps of:

forming a sacrificial layer on a predetermined region of a substrate;

forming a supporter of polycrystalline silicon to cover the sacrificial layer and the substrate on both sides of the sacrificial layer;

forming numbers of infrared sensors arranged at a predetermined distance from each other on the supporter above the sacrificial layer;

forming etching windows on the upper and lower and right and left side of said infrared sensors; and

removing the sacrificial layer to form a space between the supporter and the substrate.

2. The method for manufacturing an infrared sensor array as claimed in claim 1, wherein said sacrificial layer is formed by using materials having higher etching ratio to a predetermined impure solution than said substrate, said supporter and said infrared sensor.

3. The method for manufacturing an infrared sensor array as claimed in claim 2, wherein an insulating layer is used as for said sacrificial layer.

4. The method for manufacturing an infrared sensor array as claimed in claim 2, wherein the etching solution is hydrogenfluoride solution.

5. The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of ion implanting impurity into said polycrystalline silicon layer in case of using polycrystalline silicon layer as for said supporter.

6. The method for manufacturing an infrared sensor array as claimed in claim 1, wherein a silicon nitride layer is used as for said supporter.

7. The method for manufacturing an infrared sensor array as claimed in claim 6, further comprising the step of depositing platinum on the surface of said nitride layer in case of forming said nitride layer as for said supporter.

8. The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of forming an insulating layer for insulating said supporter and said infrared sensors after forming said supporter.

9. The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of forming at least one etching window by etching said supporter after forming said infrared sensors and before removing said sacrificial layer;

wherein said etching window plays the role of easy penetration of the etching solution into said reporter to advantageously remove said sacrificial layer.

10. The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of forming at least one etching window by etching said supporter after forming said infrared sensors and before removing said sacrificial layer;

wherein said etching window plays the role of shielding heat interference between neighboring infrared sensor.