Method for forming integrated circuit structure

• US 5,726,084 A
• Filed: 04/25/1996
• Issued: 03/10/1998
• Est. Priority Date: 06/24/1993
• Status: Expired due to Term

• Current Assignee: RPX Clearinghouse LLC (RPX Corporation)
• Original Assignee: Northern Telecom Limited (Nortel Networks Corporation)
• Inventors: Boyd, John M., Ellul, Joseph P., Tay, Sing P.
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Pham, Long
• Application Number:
  US08/637,963
• Time in Patent Office: 684 Days
• Field of Search: 148/DIG. 14, 148/DIG. 50, 438/197, 438/238, 438/239, 438/294, 438/296, 438/183, 438/184, 438/200, 438/201, 438/207, 438/227, 438/429, 438/430, 438/222
• US Class Current: 438/239
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence

Abstract

A integrated circuit structure and a method of fabrication thereof are provided. In particular, fully planarized, trench isolated semiconductor regions, e.g. comprising doped polysilicon, are provided in an integrated circuit substrate. These polysilicon regions have a smooth surface, substantially coplanar with the substrate surface, provided by chemical mechanical polishing. The near zero topography substrate provides for formation thereon of integrated circuit structures including e.g. capacitors, resistors, thin film capacitors, and interconnects, in the polysilicon trench regions at the same process level as devices formed in the semiconductor substrate. Thus a simple and flexible process for formation of improved device structures is provided, compatible with known Bipolar, CMOS and Bipolar-CMOS processes.

Claims

1. A method of fabrication of an integrated circuit structure comprising:

providing an integrated circuit substrate having a planar surface and a plurality of steep-sided trenches defined therein;

filling the trenches with at least one trench filling layer comprising a semiconductor material selected from the group consisting polycrystalline and amorphous semiconductor materials;

planarizing the substrate surface by a step of chemical mechanical polishing to remove parts of the at least one trench filling layer extending above a surface of the substrate, thereby forming a plurality of trench regions filled with semiconductor material and each having a fully planarized surface substantially coplanar with the substrate surface;

and then forming semiconductor devices in the semiconductor substrate and in the semiconductor filled trench regions.

2. A method according to claim 1 wherein the step of filling the trenches with at least one trench filling layer comprising a semiconductor material comprises lining the trench with a layer of dielectric material and then filling the trench with a layer of semiconductor material.

3. A method according to claim 1 wherein the step of filling the trenches with at least one trench filling layer comprising a semiconductor material comprises:

depositing a conformal layer of dielectric in each trench and then filling each trench with a conformal layer of semiconductor material.

4. A method of fabrication of an integrated circuit structure comprising:

providing an integrated circuit substrate having a planar surface and a plurality of steep-sided trenches defined therein;

filling the trenches by steps comprising;

lining the trenches with a layer of dielectric and then filling the trenches with at least one trench filling layer comprising a semiconductor material;

planarizing the substrate surface by a step of chemical mechanical polishing to remove parts of the at least one trench filling layer and layer of dielectric extending above a surface of the substrate, thereby forming a plurality of trench regions filled with semiconductor material and each having a fully planarized surface substantially coplanar with the substrate surface;

and then forming semiconductor devices in the semiconductor substrate and in the semiconductor filled trench regions;

wherein the step of filling the trenches with at least one trench filling layer comprising a semiconductor material comprises filling the trench with a semiconductor material selected from the group consisting polycrystalline silicon or amorphous silicon.

7. A method according to claim 4 wherein the polycrystalline silicon is deposited by chemical vapour deposition with in situ doping.

8. A method according to claim 4 wherein the polycrystalline silicon is deposited by chemical vapour deposition and subsequently doped by ion implantation and annealing.

5. A method of fabrication of an integrated circuit structure comprising:

providing an integrated circuit substrate having a planar surface and a plurality of steep-sided trenches defined therein;

filling the trenches by steps comprising;

lining the trenches with a layer of dielectric and then filling the trenches with at least one trench filling layer comprising a semiconductor material;

planarizing the substrate surface by a step of chemical mechanical polishing to remove parts of the at least one trench filling layer and layer of dielectric extending above a surface of the substrate, thereby forming a plurality of trench regions filled with semiconductor material and each having a fully planarized surface substantially coplanar with the substrate surface;

and then forming semiconductor devices in the semiconductor substrate and in the semiconductor filled trench regions;

wherein the substrate is provided having a chemical mechanical polish resistant layer.

9. A method according to claim 5 wherein providing the trench filling layers comprises providing another polish resistant layer, the polish resistant layer thereby forming a polish stop having a surface coplanar with that of the polish resistant layer of the substrate surface.

6. A method of fabrication of an integrated circuit structure comprising:

providing an integrated circuit substrate having a planar surface and a plurality of steep-sided trenches defined therein;

filling the trenches by steps comprising;

lining the trenches with a layer of dielectric and then filling the trenches with at least one trench filling layer comprising a semiconductor material;

planarizing the substrate surface by a step of chemical mechanical polishing to remove parts of the at least one trench filling layer and layer of dielectric extending above a surface of the substrate, thereby forming a plurality of trench regions filled with semiconductor material and each having a fully planarized surface substantially coplanar with the substrate surface;

and then forming semiconductor devices in the semiconductor substrate and in the semiconductor filled trench regions;

wherein the step of lining the trenches with a layer of dielectric comprises depositing a conformal layer of dielectric in each trench.