Method for manufacturing an element formed by semiconductor(s) and gas detector provided with such a semiconductor
First Claim
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1. A method for manufacturing an element formed by semiconductor(s) for detecting a gas produced by combustion comprising:
- (a) dispersing a first semiconductor metal oxide substance and a second semiconductor organic substance in a solvent to obtain a heterogeneous suspension where said first and second semiconductor substances are dispersed in a powder state insoluble in said solvent without being submitted to sintering;
(b) applying said heterogeneous suspension, wherein the granular state of said substances is maintained, on an insulating substrate having a specific resistivity value of at least 1012 Ω
cm; and
(c) removing said solvent.
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Abstract
Process for manufacturing a semiconductor element, particularly for a flue gas detector, wherein two or more different substances, at least one of which is a semiconductor in insoluble powder form, are dispersed in powder form in a solvent, and the heterogenous suspension of the semiconductor material thus obtained is applied in granular form to an insulating substrate with a specific resistivity value of at least 1012 Ω cm.
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Citations
14 Claims
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1. A method for manufacturing an element formed by semiconductor(s) for detecting a gas produced by combustion comprising:
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(a) dispersing a first semiconductor metal oxide substance and a second semiconductor organic substance in a solvent to obtain a heterogeneous suspension where said first and second semiconductor substances are dispersed in a powder state insoluble in said solvent without being submitted to sintering; (b) applying said heterogeneous suspension, wherein the granular state of said substances is maintained, on an insulating substrate having a specific resistivity value of at least 1012 Ω
cm; and(c) removing said solvent. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification