Method for manufacturing an element formed by semiconductor(s) and gas detector provided with such a semiconductor

• US 5,726,347 A
• Filed: 05/03/1996
• Issued: 03/10/1998
• Est. Priority Date: 08/13/1993
• Status: Expired due to Fees

• Current Assignee: Andre D.E. Haan
• Original Assignee: Andre D.E. Haan
• Inventors: De Haan, Andre
• Primary Examiner(s): BROCK, MICHAEL J
• Application Number:
  US08/596,295
• Time in Patent Office: 676 Days
• Field of Search: 73/31.02, 73/31.03, 73/31.05, 73/31.06, 338/34, 338/224, 427/126.3, 427/126.6, 427/126.5, 427/372.2, 437/225, 422/90, 422/98
• US Class Current: 73/31.06
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid
• CPC Class Codes: G01N 27/126 comprising organic polymers

Abstract

Process for manufacturing a semiconductor element, particularly for a flue gas detector, wherein two or more different substances, at least one of which is a semiconductor in insoluble powder form, are dispersed in powder form in a solvent, and the heterogenous suspension of the semiconductor material thus obtained is applied in granular form to an insulating substrate with a specific resistivity value of at least 10¹² Ω cm.

Claims

1. A method for manufacturing an element formed by semiconductor(s) for detecting a gas produced by combustion comprising:

(a) dispersing a first semiconductor metal oxide substance and a second semiconductor organic substance in a solvent to obtain a heterogeneous suspension where said first and second semiconductor substances are dispersed in a powder state insoluble in said solvent without being submitted to sintering;

(b) applying said heterogeneous suspension, wherein the granular state of said substances is maintained, on an insulating substrate having a specific resistivity value of at least 10¹² Ω

cm; and

(c) removing said solvent.

2. The method for manufacturing an element formed by semiconductor(s) according to claim 1, wherein said first semiconductor formed by said semiconductor metal oxide is of the n and p type in order to form n-p-n or p-n-p junctions.

3. The method for manufacturing an element formed by semiconductor(s) according to claim 1 or 2, wherein said first semiconductor is a metal oxide wherein the metal is selected from the group consisting of tin, indium, cobalt, copper, antimony, germanium, gallium, nickel, chrome, zinc and titanium, and said second semiconductor substance is a porphyrin.

4. The method according to claim 3, wherein said porphyrin is a phthalocyanine.

5. The method for manufacturing an element formed by semiconductor(s) according to claim 1 or 2, further comprising dispersing in said solvent, a semiconductor substance formed by inert alumina or silica.

6. The method for manufacturing an element formed by semiconductor(s) according to claim 5, wherein the proportion of said inert alumina or silica in said heterogeneous suspension is determined beforehand.

7. The method for manufacturing an element formed by semiconductor(s) according to claim 1, wherein said second semiconductor formed by said semiconductor organic substance is of the n and p type in order to form n-p-n or p-n-p junctions.

8. The method for manufacturing an element formed by semiconductor(s) according to claim 2 or 7, wherein the proportion of type n, type p in said first and second semiconductor substances is determined beforehand.

9. The method for manufacturing an element formed by semiconductor(s) according to claim 1 wherein prior to dispersing, said semiconductor substances are reduced in size by grinding to less than 100 μ

m.

10. The method for manufacturing an element formed by semiconductor(s) according to claim 1, wherein after dispersing said first and second semiconductor substances in the solvent, the thus obtained heterogeneous suspension is submitted to intense agitation.

11. The method for manufacturing an element formed by semiconductor(s) according to claim 1, and further repeating steps (b) and (c) to form multiple layers.

12. A combustion gas detector, comprising an element composed of semiconductor(s) obtained by the method according to claim 1, which is serially mounted with an adjustment module and is connected to a verification unit provided for detecting an amount of variation of resistivity value of said element formed by semiconductor(s) and to generate an output signal after detection of a further amount of variation superior to a predetermined threshold.

13. The gas detector according to claim 12, wherein said verification unit comprises a microprocessor provided for producing an adjustment signal in response to a voltage change measured over terminals of said element formed by semiconductor(s).

14. The gas detector according to claim 13, wherein said adjustment module comprises a transistor and a capacitor connected in parallel, said adjustment signals being supplied at the base of said transistor.