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Active matrix substrate and switching element

  • US 5,726,461 A
  • Filed: 01/02/1996
  • Issued: 03/10/1998
  • Est. Priority Date: 01/31/1995
  • Status: Expired due to Term
First Claim
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1. An active matrix substrate comprising:

  • an insulation substrate;

    a plurality of pixel electrodes arranged in a matrix form on the insulation substrate;

    a switching element provided for each of the pixel electrodes;

    gate signal lines for supplying to the switching elements a signal for controlling an electrically conducting state and a non-conducting state of the switching elements; and

    source signal lines for supplying a data signal to the pixel electrodes via the corresponding switching elements;

    wherein each switching element is a thin film transistor (TFT) including;

    a gate electrode formed on the insulation substrate;

    an insulating layer formed on the insulation substrate so as to cover the gate electrode;

    a semiconductor layer formed on the insulating layer in a portion opposite to one of the gate electrodes, the semiconductor layer including a channel region;

    a source electrode formed on one end of the semiconductor layer, one of the source signal lines overlapping the source electrode; and

    a drain electrode formed on the other end of the semiconductor layer, one of the pixel electrodes overlapping the drain electrode,and wherein the source and drain electrodes have a two-layer structure of an upper amorphous semiconductor layer and a lower micro-crystalline semiconductor layer.

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