Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same

• US 5,726,480 A
• Filed: 01/27/1995
• Issued: 03/10/1998
• Est. Priority Date: 01/27/1995
• Status: Expired due to Term

• Current Assignee: Regents of the University of California (University of California), University The Regents of The California
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Pister, Kristofer S. J.
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US08/379,751
• Time in Patent Office: 1,138 Days
• Field of Search: 257/415, 257/421, 257/522, 257/618, 257/735, 257/773, 437/228, 437/901, 437/921
• US Class Current: 257/415
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

What is described in the present specification are accelerometers using tiny proof masses and piezoresistive force detection. Conventional wisdom would indicate that this approach would not yield useful sensors. However, in fact, according to the invention, such devices are suitable in a wide range of applications. The devices may include deformable hinges to allow the fabrication of three dimensional structures. A new system has been developed which etches silicon highly selectively at moderate temperatures and without hydrodynamic forces potentially damaging to small structures and features. The system is based on the use of the gas phase etchant xenon diflouride, which is an unremarkable white solid at standard temperature and pressure.

Claims

1. In a method for fabricating a microelectromechanical (MEM) device, said MEM device being formed in or on at least one semiconductor substrate, including an integrated circuit formed therein by standard IC processing and including a microelectromechanical assembly, an improvement comprising:

providing a substantially completed MEM device through said standard IC processing, said MEM device being completely fabricated except for at least one etching step, said etching step defining a structural element within said microelectromechanical assembly from said at least one substrate to complete said device and to render said MEM device operable; and

etching said MEM device with a noble gas fluoride to define said structural element with respect to said substrate.

2. The improvement of claim 1 wherein etching said MEM device is performed with a gas phase xenon difluoride.

3. The improvement of claim 2 wherein etching said MEM device is at ambient temperature without external heating.

4. The improvement of claim 3 wherein etching said MEM device is performed under a partial vacuum.

5. The improvement of claim 1 wherein etching said MEM device is performed in a aqueous solution of tetramethyl ammonium hydroxide with silicic acid.

6. In a method for fabricating a microelectromechanical (MEM) device, said MEM device being formed in or on at least one semiconductor substrate, including an integrated circuit formed therein by standard IC processing and including a microelectromechanical assembly, an improvement comprising:

providing a substantially completed MEM device, said device being substantially completely fabricated except for a single etching step, said etching step defining a structural element within said microelectromechanical assembly from said at least one substrate to complete said device and to render said MEM device operable; and

etching said MEM device with xenon difluoride in a gas phase to define said structural element from said substrate.

7. A microelectromechanical (MEM) accelerometer sensor defined in a semiconductor substrate comprising:

a proof mass fabricated in or on said substrate using integrated circuit processes;

at least one beam coupling said proof mass to said substrate, said beam being at least in part unsupported and extending from said proof mass to said substrate; and

at least one polysilicon piezoresistor disposed in said beam,

a pair of leads coupled to said piezoresistor to provide means for electrically coupling to said piezoresistor.

8. The accelerometer sensor of claim 7 further comprising at least two unsupported beams coupling said proof mass to said substrate, each of said beams having at least one polysilicon piezoresistor disposed therein.

9. The accelerometer sensor of claim 7 wherein said substrate is generally planar and further comprising a hinge which is deformed so that said proof mass is oriented in a predetermined position out of the plane of said substrate.

10. The accelerometer sensor of claim 9 further comprising:

at least three of said proof masses fabricated from said substrate using integrated circuit processes;

at least three hinges, each of said hinges coupling one of said three proof masses to said substrate,

at least three beams coupled to corresponding ones of said three hinges, each of said beams being at least in part unsupported and extending from said proof mass to said substrate; and

at least three polysilicon piezoresistors, one of three polysilicon piezoresistors being disposed in each of said three beams,

wherein said proof masses are each oriented in a different plane relative to said substrate so that a three-axis accelerometer is provided.

11. The accelerometer sensor of claim 7 wherein said hinges are comprised of aluminum.

12. The accelerometer sensor of claim 11 wherein said beams are fabricated using xenon difluoride as a gas-phase ambient temperature etchant to define said beams apart from said substrate and proof mass.

13. The accelerometer sensor of claim 11 wherein said beams are fabricated using a tetramethyl ammonium hydroxide aqueous solution with silicic acid to define said beams apart from said substrate and proof mass.

14. The accelerometer sensor of claim 7 wherein said proof mass and polysilicon piezoresistor are formed using CMOS processes.

15. The accelerometer sensor of claim 14 wherein said beams are fabricated using xenon difluoride as a gas-phase ambient temperature etchant to define said beams apart from said substrate and proof mass.

16. The accelerometer sensor of claim 14 wherein said beam is defined and separated from said substrate through use of solution of tetramethyl ammonium hydroxide in silicic acid.

17. The accelerometer sensor of claim 9 wherein said proof mass, hinge and polysilicon piezoresistor are formed using CMOS processes.

18. In a method for fabricating a microelectromechanical (MEM) device, said MEM device being formed in or on at least one semiconductor substrate, including an integrated circuit formed therein by standard IC processing and including a microelectromechanical assembly, an improvement comprising:

providing a substantially completed MEM device, said device being substantially completely fabricated except for a single etching step, said etching step defining a structural element within said microelectromechanical assembly from said at least one substrate to complete said device and to render said MEM device operable; and

etching said MEM device with an etchant selected from the group of xenon difluoride and an aqueous solution of tetramethyl ammonium hydroxide and silicic acid to define said structural element with respect to said substrate.

19. In a method for fabricating a microelectromechanical (MEM) device, said MEM device being formed in or on at least one semiconductor substrate, including an integrated circuit formed therein by standard IC processing and including a microelectromechanical assembly, an improvement comprising:

providing a substantially completed MEM CMOS device, said device being substantially completely fabricated except for at least one etching step, said etching step defining a structural element within said microelectromechanical assembly from said at least one substrate to complete said device and to render said MEM device operable; and

etching said MEM CMOS device with a noble gas fluoride to define said structural element with respect to said substrate.

20. The improvement of claim 19 wherein said substantially completed MEM CMOS device is an accelerometer having an integrated circuit substrate, a proof mass and a piezoresistive sensing element coupling said substrate to said proof mass, but remaining undefined from them, wherein said etching defines said sensing element by a single etch step by said generally isotropic etchant.

21. In a method for mass fabrication of microelectromechanical devices, an improvement comprising:

providing a multiplicity of devices each having portions which must be oriented to predetermined three dimensional positions in order assume a final configuration for each said device, selected portions of each said device having an electrically isolated structure for receiving and holding charge for at least a temporary period; and

selectively disposing selected amounts of electric charge on said selected portions of each said device to generate mutually repulsive or attractive electrostatic forces between said selected portions to move said selected portions of each said device to said final configuration.

22. The improvement of claim 21 where selectively depositing selected amounts of electric charge on said electrically isolated structures is performed by selective control of a scanning electron microscope which is directed to deposit electron charges on said electrically isolated structures.

23. An improvement in a microelectromechanical (MEM) device having a substrate and a movable part separate from said substrate formed as part of said microelectromechanical (MEM) device, said improvement comprising a conductive and permanently deformable hinge coupling said substrate and said movable part to allow permanent spatial reconfiguration of said movable part with respect to said substrate.

24. The improvement of claim 23 wherein said hinge is deformed so that said substrate and separate part form a three dimensional structure.

25. The improvement of claim 24 further comprising a sensing means for generating a position signal indicative of the spatial orientation of said part.

26. The improvement of claim 24 further comprising force means disposed on said substrate and part for deforming said hinge to form said three dimensional structure.

27. The improvement of claim 25 further comprising circuit means disposed on said substrate or part and coupled to said sensing means for processing said position signal.

28. The improvement of claim 23 wherein said part is interacts with electromagnetic radiation.

29. A method for fabricating a microelectromechanical (MEM) device on or in at least one substrate by removing mechanical constraints disposed between and connecting at least two components of said microelectromechanical (MEM) device after said at least two components have been formed, said mechanical restraints being removed by vapor phase etching said microelectromechanical (MEM) device in a noble gas fluoride.

30. The method of claim 29 wherein said vapor phase etching is performed using XeF₂.

31. The method of claim 30 further comprising vapor phase etching said microelectromechanical (MEM) device using an inter-halogen fluoride gas in place of etching with a noble gas fluoride.

32. The method of claim 29 in which at least one of said components is a thin film or thick film component and removing mechanical constraints comprises releasing said component from said at least one substrate by vapor phase etching of said substrate.

33. The method of claim 29 in which at least one of said components is a thin film or thick film component and removing mechanical constraints comprises releasing said component from said at least one substrate by vapor phase etching of said thin or thick film component.

34. The method of claim 29 in which said components comprise at least two thin film or thick film components and removing mechanical constraints comprises releasing said components by vapor phase etching one of said at least two thin or thick film components.

35. The method of claim 29 in which at least one of said components is comprised of insulating material and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device by vapor phase etching in noble gas fluoride releases said insulating material.

36. The method of claim 35 in which at least one of said components is comprised of insulating material selected from the group of silicon dioxide, silicon nitride, photoresist, or other polymers and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device by vapor phase etching in noble gas fluoride releases said insulating material selected from the group of silicon dioxide, silicon nitride, photoresist, or other polymers.

37. The method of claim 29 in which at least one of said components is comprised of a conductor and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device by vapor phase etching in noble gas fluoride releases said conductor.

38. The method of claim 29 in which at least one of said components is comprised of a conductor selected from the group of gold and aluminum and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device by vapor phase etching in noble gas fluoride releases said conductor selected from the group of gold and aluminum.

39. The method of claim 29 in which at least one of said components is comprised of a semiconductor and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device by vapor phase etching in noble gas fluoride releases said semiconductor.

40. The method of claim 29 in which said components are comprised of a combination of two or more of the layers chosen from the categories of insulators, conductors, or semiconductors and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device by vapor phase etching in noble gas fluoride releases said combination.

41. The method of claim 29 wherein said vapor phase etching has a rate which is modified by the application of electrical or thermal bias.

42. The method of claim 29 in which at least one of said substrates has a composition selected from the group of silicon, glass, quartz, pyrex, and plastic and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device is by vapor phase etching in noble gas fluoride said substrate.

43. The method of claim 42 in which said substrate contains integrated circuitry and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device is by vapor phase etching in noble gas fluoride without affecting said integrated circuitry.

44. The method of claim 42 in which said substrate contains integrated circuitry fabricated by standard IC processing techniques and removing mechanical constraints between at least two components of said microelectromechanical (MEM) device is by vapor phase etching in noble gas fluoride without affecting said integrated circuitry fabricated by standard IC processing techniques.

45. The method according to claim 44 in which said vapor phase release etching is performed with no further masking.

46. The method of claim 29 further comprising plastically deforming at least one of said components in order to rotate at least one of said components relative to another one of said components.

47. The method of claim 46 wherein plastically deforming at least one of said components plastically deforms an aluminum component.

48. The method of claim 46 wherein plastically deforming at least one of said components rotates a sensing component.

49. The method of claim 48 wherein said sensing elements are rotated relative to each other and/or the substrate in order to sense more than one axis of a given field such as acceleration, light, magnetic flux, rotation.