Method and devices for detecting the end point of plasma process

• US 5,728,253 A
• Filed: 09/30/1994
• Issued: 03/17/1998
• Est. Priority Date: 03/04/1993
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited, Tokyo Electron Yamanashi Ltd. (Tokyo Electron Limited)
• Inventors: Saito, Susumu, Eguchi, Kazuo
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/315,837
• Time in Patent Office: 1,264 Days
• Field of Search: 156/345, 156/626.1, 216/60, 356/313, 356/316, 204/298.32, 204/298.03, 118/712, 118/708, 118/723 E
• US Class Current: 156/345.25
• CPC Class Codes: B81C 1/00587 Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
• CPC Class Codes: B81C 2201/0142 Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014
• CPC Class Codes: B81C 99/0065 Process control; Yield prediction
• CPC Class Codes: G01N 21/68 using high frequency electric fields
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C₂ in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.

Claims

1. A plasma process apparatus comprising:

a process chamber having a monitor window;

a pair of electrodes located in said process chamber, one of which is provided for supporting an object and between which a high-frequency power is supplied to change a process gas into plasma;

light-collecting means for collecting light emanating from the plasma through said monitor window;

first optical detecting means for detecting an emission spectrum from the light collected by said light-collecting means; and

means for determining the end point of the plasma process from the emission intensity of the emission spectrum detected by said first optical detecting means;

wherein said monitor window is secured to a distal end of a cylindrical member protruding from said process chamber, and said cylindrical member has an annular portion provided on an inner surface of said cylindrical member and a cylindrical portion provided on an end portion of said annular portion, said annular portion and said cylindrical portion constituting a narrow gas passage and defining a region for trapping a gas generated in the plasma process.

2. An apparatus according to claim 1, wherein said cylindrical member comprises temperature-adjusting means.

3. An apparatus according to claim 1, further comprising second optical detecting means for detecting an emission spectrum over a wavelength region specific to an active species generated during the plasma process.

4. An apparatus according to claim 3, further comprising further comprising calculation means for calculating a ratio or difference between the emission intensity of the emission spectrum detected by said first optical detecting means and the emission intensity of the emission spectrum detected by said second optical means.

5. An apparatus according to claim 1, wherein a ratio (D/d) of an inside diameter D of that opening portion of said cylindrical member which communicates with said process chamber to an inside diameter d of said cylindrical member is 0.2 to 0.7.

6. An apparatus according to claim 1, wherein said cylindrical member has a length of 5 to 30 mm.

7. An apparatus according to claim 1, wherein said cylindrical member has a tapered shape.

8. An apparatus according to claim 1, wherein said process chamber is separated from said annular portion such that a shortest distance between said process chamber and said annular portion is 5 to 30 mm.

9. An apparatus according to claim 2, wherein said temperature-adjusting means is a cooling jacket.

10. An apparatus according to claim 2, wherein said temperature-adjusting means is a heater.