Terahertz generators and detectors
First Claim
Patent Images
1. A device for generating or detecting far infra-red pulsed radiation in the pulse frequency range of 1010 to 1013 Hz comprising:
- a photoconductor substrate,at least two spaced apart electrodes formed on the surface of the photoconductor substrate thus forming an electrode gap therebetween,DC bias means for biasing said at least two spaced apart electrodes, and optical pump means comprising at least one laser with its output beam indent on said electrode gap,the said electrode gap further defined as having a first edge of a first electrode spaced from and facing a second edge of a second electrode with each of said edges having a first end and a second end, the first and second ends approximately facing one another thus forming therebetween an electrode gap, said electrode gap having a geometric area defined by;
a. the edge of said first electrode,b. an imaginary line connecting the first end of the first edge with the first end of the second edge.c. the edge of the second electrode, andd. an imaginary line connecting the second end of the first edge with the second end of the second edge, the invention characterized in that the said geometric area has at least five sides.
5 Assignments
0 Petitions
Accused Products
Abstract
The specification describes pulse generators and detectors for the far infra-red and operating at frequencies of the order of 1010 to 1013 Hz (the Terahertz range). These devices rely on electric field interactions with optical beams in biased metal semiconductor microstructures. The electric field is created between metal electrodes on the semiconductor surface and the electric field is enhanced, according to the invention, by configuring the electrode gap geometry with sharp electrode features.
61 Citations
10 Claims
-
1. A device for generating or detecting far infra-red pulsed radiation in the pulse frequency range of 1010 to 1013 Hz comprising:
-
a photoconductor substrate, at least two spaced apart electrodes formed on the surface of the photoconductor substrate thus forming an electrode gap therebetween, DC bias means for biasing said at least two spaced apart electrodes, and optical pump means comprising at least one laser with its output beam indent on said electrode gap, the said electrode gap further defined as having a first edge of a first electrode spaced from and facing a second edge of a second electrode with each of said edges having a first end and a second end, the first and second ends approximately facing one another thus forming therebetween an electrode gap, said electrode gap having a geometric area defined by; a. the edge of said first electrode, b. an imaginary line connecting the first end of the first edge with the first end of the second edge. c. the edge of the second electrode, and d. an imaginary line connecting the second end of the first edge with the second end of the second edge, the invention characterized in that the said geometric area has at least five sides. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A device for generating or detecting far infra-red pulsed radiation in the pulse frequency range of 1010 to 1013 Hz comprising:
-
a photoconductor substrate, at least two spaced apart electrodes formed on the surface of the photoconductor substrate thus forming an electrode gap therebetween, DC bias means for biasing said at least two spaced apart electrodes, and optical pump means comprising at least one laser with its output beam spot incident on said electrode gap, the invention characterized in that the output beam spot of the optical pump means overlaps a sharp feature of the said electrode gap, the sharp feature being defined as an edge portion of the electrode having an angle of less than 135 degrees.
-
Specification