Application of diamond-like carbon coatings to cobalt-cemented tungsten carbide components
First Claim
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1. A method for adhering a coating of diamond-like carbon to a cobalt-cemented tungsten carbide substrate comprising:
- exposing said substrate to a vacuum of at least about 10-5 torr;
heating said substrate to a first temperature between about 200 °
-600°
C. (392°
-1112°
F.);
depositing an intermediate material selected from the group consisting of silicon and germanium onto said substrate in an amount sufficient to form an intermetallic bonding layer cohesively bonded to an interlayer of said intermediate material;
substantially simultaneously bombarding said interlayer with a first energetic beam of ions at a first energy, a first ion arrival ratio, and for a first amount of time sufficient to form said intermetallic bonding layer cohesively bonded to said interlayer;
condensing a diamond-like carbon precursor onto said interlayer at a second temperature and for a second amount time sufficient to form a film of said precursor molecules on said interlayer;
substantially simultaneously bombarding said diamond-like carbon precursor with a second energetic beam of ions at a second energy, a second ion arrival ratio, and a for third amount of time sufficient to form a carbide bonding layer cohesively bonded to an outer coating of diamond-like carbon.
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Abstract
The present invention uses ion beam assisted deposition to adhere a diamond-like carbon coating to a cobalt-cemented tungsten carbide substrate, resulting in the following gradient at the surface of the substrate: substrate/(metal-silicide or metal-germanide)/(silicon or germanium)/(silicon carbide or germanium carbide)/DLC.
105 Citations
21 Claims
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1. A method for adhering a coating of diamond-like carbon to a cobalt-cemented tungsten carbide substrate comprising:
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exposing said substrate to a vacuum of at least about 10-5 torr; heating said substrate to a first temperature between about 200 °
-600°
C. (392°
-1112°
F.);depositing an intermediate material selected from the group consisting of silicon and germanium onto said substrate in an amount sufficient to form an intermetallic bonding layer cohesively bonded to an interlayer of said intermediate material; substantially simultaneously bombarding said interlayer with a first energetic beam of ions at a first energy, a first ion arrival ratio, and for a first amount of time sufficient to form said intermetallic bonding layer cohesively bonded to said interlayer; condensing a diamond-like carbon precursor onto said interlayer at a second temperature and for a second amount time sufficient to form a film of said precursor molecules on said interlayer; substantially simultaneously bombarding said diamond-like carbon precursor with a second energetic beam of ions at a second energy, a second ion arrival ratio, and a for third amount of time sufficient to form a carbide bonding layer cohesively bonded to an outer coating of diamond-like carbon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification