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Semiconductor integrated circuit device

  • US 5,731,607 A
  • Filed: 04/17/1996
  • Issued: 03/24/1998
  • Est. Priority Date: 04/24/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor integrated circuit device comprising:

  • a first and a second FETs connected in series with respect to the signal path;

    a third FET connected between the node of said first and second FETs and a ground region;

    a first high-impedance element connected between the gate terminal of said first FET and a first control terminal for controlling said first FET and said second FET; and

    a second high-impedance element connected between the gate terminal of said second FET and said first control terminal.

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