Static, low current sensing circuit for sensing the state of a fuse device

• US 5,731,733 A
• Filed: 09/29/1995
• Issued: 03/24/1998
• Est. Priority Date: 09/29/1995
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Denham, Martin S.
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): ENGLUND, TERRY LEE
• Application Number:
  US08/537,142
• Time in Patent Office: 907 Days
• Field of Search: 327/525, 327/50, 327/51, 327/543, 327/538, 327/530, 327/546, 327/545, 327/541, 327/20, 365/225.7, 323/315, 326/38
• US Class Current: 327/525
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: G11C 17/18 Auxiliary circuits, e.g. for writing into memory
• CPC Class Codes: G11C 29/02 Detection or location of defective auxiliary circuits, e.g. defective refresh counters
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing
• CPC Class Codes: G11C 29/785 with redundancy programming schemes
• CPC Class Codes: G11C 7/062 Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Abstract

A fuse sensing circuit comprises a first branch includes a first sensing transistor, and a fuse coupled to the source of the first sensing transistor. The fuse has a programmed state characterized by a first resistance, and an unprogrammed state in which the fuse has a second resistance. A second reference branch is coupled to the first branch in a current mirror configuration and includes a second sensing transistor, and a predetermined reference resistance coupled to the source of the second sensing transistor. The reference resistance is matched to the fuse device in an un-programmed state. The potential at an output node coupled to the first sensing transistor is determined by the state of the fuse device, such that the potential of the output node is within a first voltage range if the fuse device is programmed, and a second voltage range if the fuse device is un-programmed.

Claims

1. A fuse sensing circuit comprising:

a first circuit including a first fuse, the first circuit being coupled to receive first and second voltage supplies;

a second circuit coupled to the first circuit in a current mirror configuration and coupled to receive the first and second voltage supplies, the second circuit including a reference resistance;

a first output node coupled to the first circuit to indicate a state of the first fuse, a potential on the first output node being within a first range if the first fuse is un-programmed or within a second range if the first fuse is programmed; and

a first margin test device coupled to the first circuit, the first margin test device changing the potential on the first output node when the first margin test device is turned on such that the state of the first fuse is identified as being marginal if the changed potential is not within either of the first or second ranges.

2. The fuse sensing circuit of claim 1 wherein the reference resistance comprises one or more fuses in series, the one or more fuses being matched lithographically and in material to the first fuse in an un-programmed state.

3. The fuse sensing circuit of claim 1 wherein corresponding devices included in the first and second circuits are matched lithographically and in material.

4. The fuse sensing circuit of claim 1 wherein the current mirror configuration is established by coupling a first sensing transistor in the first circuit to a second sensing transistor in the second circuit, and wherein the first circuit further includes a first sense enable transistor coupled between the first sensing transistor and the first voltage supply and the second circuit further includes a second sense enable transistor coupled between the second sensing transistor and the first voltage supply, the first and second sense enable transistors being coupled to receive a sense enable signal to enable sensing of the first fuse.

5. The fuse sensing circuit of claim 4 further including first and second load devices, the first load device being coupled between the first sense enable transistor and the first voltage supply, the second load device being coupled between the second sense enable transistor and the first voltage supply, the first and second load devices being matched in layout and materials.

6. The fuse sensing circuit of claim 1 wherein the first margin testing device raises the potential on the first output node when the first margin test device is turned on such that the first fuse is identified as being marginally un-programmed if the raised potential is outside of the first range, the sensing circuit further including a second margin testing device coupled to the second circuit, the second margin testing device lowering the potential on the first output node when the second margin testing device is turned on such that the first fuse is identified as being marginally, programmed if the lowered potential is outside of the second range.

7. The fuse sensing circuit of claim 5 wherein the first margin testing device raises the potential on the first output node when the first margin test device is turned on such that the first fuse is identified as being marginally un-programmed if the raised potential is outside of the first range, the sensing circuit further including a second margin testing device coupled to the second circuit, the second margin testing device lowering the potential on the first output node when the second margin testing device is turned on such that the first fuse is identified as being marginally programmed if the lowered potential is outside of the second range.

8. The fuse sensing circuit of claim 1 further including a third circuit coupled to the second circuit in a current mirror configuration and coupled to receive the first and second voltage supplies, the third circuit including a second fuse and a second output node coupled to the third circuit to indicate a state of the second fuse.

9. The fuse sensing circuit of claim 8 wherein the potential of the second output node is within the first range if the second fuse is un-programmed and within the second range if the second fuse is programmed.

10. The fuse sensing circuit of claim 8 wherein one of the first and second fuses is programmed and the other of the first and second fuses is unprogrammed, the state of the first fuse being identified by comparing the potential on the first output node to the potential on the second output node.

11. The fuse sensing circuit of claim 1 further including a storage device for storing the state of the first fuse.

12. A fuse sensing circuit comprising:

a current mirror including two circuit branches coupled in a current mirror configuration, the current mirror coupled between first and second voltage supplies;

a first fuse coupled between a first branch of the two circuit branches of the current mirror and the first voltage supply;

a reference resistance coupled between a second branch of the two circuit branches and the first voltage supply;

a first output node coupled to the first branch, a potential on the first output node indicating that the first fuse is un-programmed if the potential is within a first range, the potential indicating that the first fuse is programmed if the potential is within a second range; and

first and second margin test devices coupled to the first branch and coupled to the second voltage supply, each of the first and second margin test devices changing the potential on the output node when enabled to indicate that the first fuse is marginal if the changed potential is outside of the first and second ranges.

13. The fuse sensing circuit of claim 12 wherein the reference resistance comprises one or more fuses in series, the one or more fuses being matched lithographically and in material to the first fuse.

14. The fuse sensing circuit of claim 12 further including a third circuit branch coupled to the second branch of the to current mirror in a current mirror configuration and coupled between the first and second voltage supplies, the third circuit branch including a second fuse and a second output node, a potential on the second output node indicating a state of the second fuse, the potential on the second output node being within a third range if the second fuse is un-programmed or within a fourth range if the second fuse is programmed.

15. The fuse sensing circuit of claim 12 further including sense enable circuitry coupled to the current mirror, the sense enable circuitry responsive to a sense enable signal to turn on the current mirror to enable the fuse sensing circuit to sense the state of the first fuse.

16. A fuse sensing circuit for sensing a state of at least a first fuse, the fuse sensing circuit comprising:

a first circuit including a first fuse having one terminal coupled to a first supply voltage and an opposite terminal coupled to a first terminal of a first sensing transistor, a second terminal of the first sensing transistor coupled to a second supply voltage;

a second circuit including a reference resistance coupled to the first supply voltage and to a first terminal of a second sensing transistor, a second terminal of the second sensing transistor coupled to the second supply voltage, the first and second sensing transistors being coupled in a current mirror configuration;

a first output node coupled to the second terminal of the first sensing transistor to indicate the state of the first fuse by a sensed potential, the sensed potential on the first output node being within a first range if the first fuse is un-programmed, the sensed potential being within a second range if the first fuse is programmed; and

a first margin test device having one terminal coupled to the second terminal of the first sensing transistor, the first margin test device changing the sensed potential on the first output node when the first margin test device is turned on such that the first fuse is identified as being marginally un-programmed if the changed potential is outside the first range and the sensed potential is within the first range.

17. The fuse sensing circuit of claim 16 further including a second margin test device having one terminal coupled to the second terminal of the second sensing transistor, the second margin test device changing the sensed potential on the first output node when the second margin test device is turned on such that the first fuse is identified as being marginally programmed if the changed potential is outside the second range and the sensed potential is within the second range.

18. The fuse sensing circuit of claim 16 wherein the first circuit further includes a first sense enable transistor coupled between the second terminal of the first sensing transistor and the second supply voltage and the second circuit further includes a second sense enable transistor coupled between the second terminal of the second sensing transistor and the second supply voltage, the first and second sense enable transistors being responsive to a sense enable signal to disable the fuse sensing circuit.

19. The fuse sensing circuit of claim 16 wherein the first circuit further includes a first load device coupled between the second terminal of the first sensing transistor and the second supply voltage and the second circuit further includes a second load device coupled between the second terminal of the second sensing transistor and the second supply voltage, the first and second load devices being matched in layout and materials.

20. The fuse sensing circuit of claim 16 wherein corresponding devices in the first and second circuits are matched in layout and materials.

21. The fuse sensing circuit of claim 16 wherein the reference resistance comprises one or more fuses in series, the one or more fuses being matched lithographically and in material to the first fuse.

22. The fuse sensing circuit of claim 16 further including:

a third circuit including a second fuse having one terminal coupled to the first supply voltage and an opposite terminal coupled to a first terminal of a third sensing transistor, a second terminal of the third sensing transistor coupled to the second supply voltage, and

a second output node coupled to the second terminal of the third sensing transistor to indicate a state of the second fuse by a sensed potential, the sensed potential on the second output node being within a third range if the second fuse is un-programmed, the sensed potential being within a fourth range if the second fuse is programmed.

23. The fuse sensing circuit of claim 18 further including a storage device to store the state of the first fuse, the storage device including:

a first NAND gate having a first input coupled to the first output node indicating the state of the first fuse and a second input coupled to receive the sense enable signal,

an inverter coupled to the first output node,

a second NAND gate having a first input coupled to an output of the inverter communicating an inverted state of the first fuse, and a second input coupled to receive the sense enable signal, and

a latch device to latch the state of the first fuse in response to the sense enable signal being asserted, the latch device receiving the outputs of the first and second NAND gates to latch the state of the first fuse.

24. The fuse sensing circuit of claim 16 wherein the reference resistance comprises a section of fuse material.